3D Memory Gate Stack Insulation for Hydrogen Passivation
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Solution Overview
Problem
Current semiconductor devices face limitations in increasing data storage capacity and performance, particularly in efficiently providing hydrogen to memory cells for enhanced passivation properties, which restricts the density and stability of memory cells.
Innovation Solution
A semiconductor device design featuring a gate stacking structure with a hydrogen-containing insulation layer, separate from the separation structure, that includes a base insulation portion and a hydrogen-containing portion with a different material, allowing for increased passivation properties and easier manufacturing processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional insulation layer is used in the connection region, then the manufacturing process is simple, but hydrogen cannot be effectively supplied to memory cells for passivation
Solution Approach 1:
The insulation layer is segmented into two distinct portions: a first insulation portion and a second insulation portion. The first insulation portion is formed in the cell array region and the second insulation portion is formed in the connection region. This segmentation allows each portion to have optimized properties for its specific region, with the second portion providing hydrogen supply for passivation while the first portion maintains standard insulation functions.
Solution Approach 2:
Different regions of the insulation layer are assigned different materials and properties. The first insulation portion in the cell array region uses standard insulating material, while the second insulation portion in the connection region uses material containing hydrogen. This local quality differentiation enables targeted hydrogen supply to memory cells without affecting other regions, resolving the contradiction between reliability improvement and device complexity.
2Reliability
If hydrogen-containing material is added to the insulation layer, then passivation properties improve, but the manufacturing process becomes more complex
Solution Approach 1:
The insulation layer fabrication is segmented into two sequential processes: forming the first insulation portion with standard material, and then forming the second insulation portion with hydrogen-containing material. This segmentation allows each portion to be manufactured using appropriate techniques, with the second portion being selectively formed only in the connection region where hydrogen supply is needed, thereby managing manufacturing complexity while achieving passivation improvement.
Solution Approach 2:
The hydrogen-containing material is applied locally only in the connection region rather than throughout the entire insulation layer. This localized approach minimizes the impact on manufacturing complexity while concentrating the passivation benefit where it is most needed - in the memory cells accessed through the connection region.
3Device complexity
If the insulation layer is integrated with the separation structure, then device complexity is reduced, but design freedom and sufficient size are limited
Solution Approach 1:
The insulation layer is segmented as a separate structure from the separation structure. The first insulation portion is formed independently in the cell array region, and the second insulation portion is formed independently in the connection region. This structural segmentation provides design freedom to optimize the insulation layer configuration without being constrained by the separation structure geometry, while maintaining clear functional boundaries.
Solution Approach 2:
The insulation layer function is extracted from the separation structure and implemented as a distinct component. This extraction allows the insulation layer to be designed and optimized independently, providing sufficient size and design freedom for both the first and second portions to fulfill their respective functions without being limited by the separation structure's design constraints.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The semiconductor device achieves improved performance and productivity by effectively supplying hydrogen to memory cells, increasing passivation properties and allowing for higher memory cell density without compromising peripheral properties.
Implementation Method 1
The hydrogen-containing insulation portion includes a hydrogen-containing portion having a different material from a material of the base insulation portion. The hydrogen-containing portion includes hydrogen.
Data Source
AI summary
A semiconductor device includes a cell array region and a connection region. A gate stacking structure includes gate electrodes and interlayer insulation layers that are alternately stacked. The gate stacking structure extends in a first direction and is separated by separation structures in a second direction. A channel structure penetrates the gate stacking structure in the cell array region. Gate contact portions penetrate the gate stacking structure in the connection region. The gate contact portions are electrically connected to the gate electrodes, respectively. An insulation layer is provided separately from the separation structure and covers at least the gate stacking structure. The insulation layer comprises a base insulation portion and a hydrogen-containing insulation portion. The hydrogen-containing insulation portion includes a hydrogen-containing portion having a different material from a material of the base insulation portion. The hydrogen-containing portion including hydrogen.