Memory Device Leakage Suppression via Grouped Source Drivers
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Solution Overview
Problem
Existing memory technologies face challenges in scaling down due to parasitic leakage current, which increases power consumption and can cause data misread issues, necessitating effective suppression of bit line leakage current while optimizing memory device area.
Innovation Solution
The memory device employs a word line driver and source drivers to selectively control word lines and output source control signals, grouping memory units to manage voltage levels and reduce leakage current by using select and bias levels for read-write operations, thereby suppressing bit line leakage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If memory array size increases, then storage capacity improves, but parasitic leakage current increases
Solution Approach 1:
The memory array is divided into multiple groups (first group, second group, third group) based on row sequences. Source drivers are assigned to control different groups of memory units, allowing selective activation and control of leakage current in specific segments rather than the entire array, thus managing leakage current as storage capacity increases.
Solution Approach 2:
Different source control signals (first source control signal, second source control signal, third source control signal) are applied to different memory unit groups. The select level and bias level are locally controlled for different groups, enabling optimized leakage current suppression in specific regions while maintaining overall storage capacity.
2Measurement precision
If bit line leakage current is suppressed, then data reading accuracy improves, but device area increases
Solution Approach 1:
Source drivers are configured to control multiple memory unit groups (first group, second group, third group) using a unified control mechanism. The same source driver structure can manage leakage current across different groups by applying appropriate source control signals, reducing the need for separate leakage suppression circuits for each group and thus minimizing area increase.
Solution Approach 2:
The invention changes the control parameters (select level, bias level) of source control signals to suppress leakage current. By dynamically adjusting these voltage levels based on which memory unit groups are active, the system achieves effective leakage suppression without requiring proportional increases in device area for additional suppression circuits.
3Productivity
If source control signals are applied to all memory units, then read-write operation completeness improves, but power consumption increases
Solution Approach 1:
Memory units are segmented into multiple groups that can be controlled independently through different source control signals. Only the necessary groups are activated based on the read-write operation requirements, avoiding unnecessary power consumption in inactive groups while ensuring complete operation for active groups.
Solution Approach 2:
The system uses sequential activation of different memory unit groups (first group, then second group, then third group) with corresponding source control signals. This periodic activation pattern ensures that only relevant memory units are operated on at any given time, reducing overall power consumption while maintaining operational completeness through systematic progression through all groups.
Data Source
AI summary
A memory device includes a memory array, a word line driver, and source drivers. The memory array includes memory units. The memory units arranged in the same column are coupled to corresponding bit line. The memory units arranged in the same row are coupled to corresponding word line. The memory units arranged in the rows are divided into N groups, in which N is an integer greater than or equal to 2. The word line driver is configured to selectively enable the word lines. Source drivers are coupled to the memory units in the groups respectively and configured to output N source control signals. When any word line in a first group is enabled, the source control signals corresponding to the first group and a second group of which the sequence for read-write operation is next to the first group are controlled at a select level by corresponding source drivers.