Memory Cell Line Switching to Cut Idle Bit Line Power
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Solution Overview
Problem
Memory devices with high power consumption due to idle bit lines being activated during read/write operations, which increases energy usage.
Innovation Solution
Incorporating column and row switches controlled by word lines to selectively connect memory cells to bit lines, reducing unnecessary power consumption by only activating lines required for data transmission.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If all bit lines are coupled to selected memory cells during read/write operations, then data transmission is enabled, but power consumption increases due to idle bit lines being activated
Solution Approach 1:
The bit line system is segmented into multiple independent bit line groups, each可控 by its own switch. This allows selective activation of only the bit line groups needed for the current operation, rather than activating all bit lines. The segmentation enables granular control over which memory cell columns are accessed, reducing the number of active bit lines and thus lowering power consumption while maintaining full data transmission capability when needed.
Solution Approach 2:
The patent introduces dynamic control mechanisms (switches controlled by column word lines and byte enable signals) that adaptively configure which bit lines are active based on the specific read/write operation being performed. This dynamic reconfiguration allows the system to optimize power consumption for each operation by activating only the necessary bit lines, while maintaining the capability to activate all bit lines when full bandwidth is required.
2Use of energy by moving object
If column word lines are added to control column switches, then power consumption is reduced by selective activation, but device complexity increases
Solution Approach 1:
The column word lines serve multiple functions: they select specific memory cell columns for access and simultaneously control the switches that connect those columns to bit lines. This multi-functionality reduces the need for separate control lines for each switch, as the column word lines themselves provide the control signals. The byte enable signals provide additional multi-functional control by enabling or disabling entire groups of bit lines based on operational requirements.
Solution Approach 2:
The patent merges the column selection function with the bit line switch control function by using the same column word lines to control both. Instead of having separate control lines for switch activation, the column word line signals are reused to control the switches, combining multiple control functions into a single signal path and reducing overall control line complexity.
Data Source
AI summary
A memory device includes a plurality of word lines elongated along a first direction, and at least one memory unit. The at least one memory unit includes a plurality of memory cells, at least one bit line, and at least one column word line. The plurality of memory cells are arranged along a second direction different from the first direction. The at least one bit line is elongated along the second direction, and configured to transmit data of a selected memory cell. The at least one column word line is elongated along the second direction, and configured to control electrical connections between the memory cells and the at least one bit line, wherein the selected memory cell is selected by a corresponding word line and the at least one column word line.


