Memory-Logic Cell Transition Layout for Smaller IC Footprint
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Solution Overview
Problem
The placement of memory cells and logic cells in integrated circuits (ICs) according to predefined design rules results in a significant increase in device size due to reserved spaces, leading to fabrication complexity and potential defects, which degrade circuit performance and yield.
Innovation Solution
Introduce edge dummy cells and well strap cells between memory and logic cell blocks to facilitate uniformity and stability, reducing the need for large reserved spaces and optimizing the layout.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If memory cells and logic cells are placed according to predefined design rules with reserved spaces, then fabrication uniformity and stability are improved, but device size increases significantly
Solution Approach 1:
The patent merges memory cells and logic cells into a unified cell structure where they share common boundaries and fabrication processes. This integration eliminates the need for separate reserved spaces between distinct memory and logic cell blocks, reducing overall device area while maintaining fabrication uniformity through shared process steps
Solution Approach 2:
The unified cell structure serves multiple functions simultaneously - it acts as both a memory cell and a logic cell, eliminating the need for separate dedicated spaces for each function. This multi-functionality approach reduces the total device area by consolidating what would traditionally require separate reserved spaces for memory and logic operations
2Manufacturing precision
If reserved spaces are increased between cells to ensure fabrication stability, then manufacturing precision is improved, but device complexity increases
Solution Approach 1:
By merging memory and logic cells into a unified structure with shared boundaries, the patent reduces the number of distinct cell interfaces that require reserved spaces. This consolidation simplifies the fabrication process by reducing the complexity of managing multiple separate cell blocks and their intervening spaces
3Area of stationary object
If reserved spaces are reduced to minimize device size, then area is improved, but layout-dependent defects increase
Solution Approach 1:
The unified cell structure merges memory and logic cells so that they share common fabrication boundaries and process steps. This integration minimizes layout-dependent variations by reducing the number of distinct cell interfaces, thereby maintaining circuit performance and reliability while achieving smaller device area
Data Source
AI summary
A semiconductor structure includes a memory cell, a logic cell, and a transition region between the memory cell and the logic cell. The memory cell includes a first active region and a plurality of first gate structures with a gate pitch. The logic cell includes a second active region and a plurality of second gate structures with the gate pitch. The transition region includes a first dielectric feature and a second dielectric feature. The first dielectric feature divides the first active region into a first segment partially in the transition region and a second segment fully in the transition region. The second dielectric feature divides the second active region into a third segment partially in the transition region and a fourth segment fully in the transition region.