Semiconductor Memory Power-Up Signal Generator and Initializer

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Solution Overview

Problem

Semiconductor memory devices face challenges in reliably initializing data in memory cell arrays during initialization operations, which affects the reliability and efficiency of subsequent operations.

Innovation Solution

A semiconductor memory device and system that includes a power-up signal generator, initializer, and memory cell array, where the initializer generates initialization and refresh commands in response to power-up and reset signals, enabling reliable initialization and initial data writing to memory cells.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Loss of energy

If initialization operation is performed in response to power-up signal only, then power consumption is reduced, but initialization reliability deteriorates due to uncertain voltage levels

Engineering Contradiction:
Improvepower consumptionVSAvoidinitialization reliability
Core Design Contradiction:
Loss of energyVSReliability

Solution Approach 1:

The patent applies preliminary action by performing an initial refresh operation before normal read/write operations. The initializer generates an initial refresh command in response to both power-up signal and reset signal, ensuring memory cells are properly initialized before use. This preliminary initialization action guarantees reliable data state regardless of voltage uncertainty during power-up.

Inventive Principle:
Principle #10Preliminary action

2Reliability

If initialization operation is delayed until voltage stabilization, then initialization reliability improves, but operation time increases

Engineering Contradiction:
Improveinitialization reliabilityVSAvoidinitialization time
Core Design Contradiction:
ReliabilityVSLoss of time

Solution Approach 1:

The patent implements feedback by using the reset signal to trigger the initial refresh operation. The reset signal serves as a feedback mechanism that confirms the memory device is in a known state, allowing the initializer to immediately generate the initial refresh command without waiting for voltage stabilization. This feedback-based approach ensures reliability while minimizing delay.

Inventive Principle:
Principle #23Feedback

3Speed

If initial refresh command is generated without reset signal confirmation, then operation speed increases, but data initialization reliability deteriorates

Engineering Contradiction:
Improveinitialization speedVSAvoiddata initialization reliability
Core Design Contradiction:
SpeedVSReliability

Solution Approach 1:

The patent ensures data initialization reliability by requiring the reset signal as a prerequisite before generating the initial refresh command. This preliminary confirmation action verifies that the memory device has completed its reset state, guaranteeing that all memory cells are in a known initial state before the refresh operation begins, thus ensuring reliable data initialization.

Inventive Principle:
Principle #10Preliminary action

Data Source

PatentUS10770154B2Semiconductor memory devices and memory systems having the same
Publication Date: 2020.09.08 SAMSUNG ELECTRONICS CO LTD
  • US10770154B2 patent drawing
  • US10770154B2 patent drawing
  • US10770154B2 patent drawing

AI summary

Provided are a semiconductor memory device and a memory system including the same. The semiconductor memory device includes a power-up signal generator configured to generate a power-up signal in response to a memory voltage reaching a target voltage level, an initializer configured to generate an initialization signal in response to the power-up signal and a reset signal and to generate an initial refresh command in response to completion of an initialization operation, and a memory cell array including a plurality of memory cells connected between a plurality of word lines and a plurality of bit lines, the memory cell array configured to perform an initial refresh operation on the plurality of memory cells in response to the initial refresh command.