Semiconductor Memory Precharge Voltage Distance Adaptation
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Solution Overview
Problem
The reliability of semiconductor memory devices is compromised due to increased disturbance between elements as the size of memory cells decreases, leading to inefficiencies in precharge voltage delivery across bit lines, especially with greater distances between the read/write circuit and the selected memory block, resulting in reduced program and read operation reliability.
Innovation Solution
A semiconductor memory device with a voltage generator that adjusts the precharge voltage based on the distance between the read/write circuit and the selected memory block, ensuring stable operation by varying the precharge voltage levels accordingly, thereby enhancing reliability across the memory cell array.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If the size of memory cells is reduced to decrease device size, then the device dimensions are improved, but disturbance between elements increases and reliability deteriorates
Solution Approach 1:
The patent applies local quality by providing different precharge voltage levels to different bit lines based on their specific characteristics. Bit lines coupled to memory blocks farther from the read/write circuit receive higher precharge voltages than those closer to the circuit, compensating for the increased disturbance and voltage drop in longer bit lines while maintaining optimal operation for shorter bit lines.
Solution Approach 2:
The patent changes the precharge voltage parameter dynamically based on the distance between the read/write circuit and the selected memory block. The voltage generator adjusts the precharge voltage level according to the bit line characteristics, thereby optimizing the signal integrity and operation reliability for memory cells of different sizes and positions.
2Device complexity
If a fixed precharge voltage is supplied to all bit lines, then the circuit design is simplified, but operation reliability deteriorates due to distance-dependent voltage delivery issues
Solution Approach 1:
The patent implements local quality by tailoring the precharge voltage level to each bit line's specific distance characteristics. The voltage generator selectively applies different precharge voltages to different bit lines based on their coupling distance to the read/write circuit, ensuring optimal signal delivery without requiring complex individual control circuits for each bit line.
Solution Approach 2:
The voltage generator performs multiple functions: it generates precharge voltages for all bit lines, selectively adjusts voltage levels based on distance, and compensates for signal degradation. This multi-functionality allows the system to maintain high reliability across varying bit line distances without proportionally increasing circuit complexity.
Data Source
AI summary
A semiconductor memory device and a method of operating the same are disclosed. The semiconductor memory device includes a memory cell array including memory blocks, a voltage generator configured to generate a precharge voltage; and a read and write circuit coupled to the memory blocks through bit lines, and configured to supply the precharge voltage to the bit lines when a selected memory block is accessed. Here, the precharge voltage varies depending on a distance between the read and write circuit and the selected memory block.