Memory Device Programming Sequence for Signal Coupling Reduction
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Solution Overview
Problem
The increasing integration of non-volatile memory devices leads to increased signal coupling and interference during programming, reducing data reliability and device performance.
Innovation Solution
A method of programming memory devices by alternating between odd and even rows, with specific programming sequences and step sizes to minimize word line coupling, ensuring even rows closer to the first row are programmed before those farther away, and using different verification levels and programming pulses for odd and even rows.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the degree of integration of non-volatile memory is increased, then device performance and price competitiveness are enhanced, but signal coupling and interference between memory cells increase, leading to reduced data reliability
Solution Approach 1:
The patent segments the memory device into odd rows and even rows, programming them in alternating sequences rather than simultaneously. This segmentation approach reduces signal coupling between adjacent memory cells by time-multiplexing the programming operations, thereby maintaining high integration while improving data reliability
Solution Approach 2:
The patent implements periodic programming actions where odd rows and even rows are programmed in alternating periodic cycles. This periodic action pattern ensures that no two adjacent rows are programmed simultaneously, reducing interference and improving reliability while maintaining efficient device performance
2Productivity
If conventional programming sequences are used, then programming speed is maintained, but signal coupling and interference between adjacent memory cells increase
Solution Approach 1:
The programming sequence is segmented into distinct phases for odd rows and even rows. By dividing the programming operation into these segments and executing them alternately, the patent reduces signal coupling between adjacent cells while maintaining overall programming efficiency through optimized sequencing
Solution Approach 2:
The patent performs preliminary programming of odd rows before even rows, or vice versa, in a predetermined sequence. This preliminary action approach allows the controller to pre-program certain rows while others are being verified or prepared, reducing simultaneous signal coupling while maintaining programming speed through efficient task scheduling
Data Source
AI summary
A memory device includes a plurality of memory cells arranged in a plurality of rows and a plurality of strings. A method of programming the memory device includes programming a first row of the memory cells. The method also includes, after programing the first row of the memory cells, programming a second row of the memory cells. The second row is adjacent to the first row in a first string direction. The method further includes, after programming the second row of the memory cells, programming a third row of the memory cells. The third row is two rows apart from the second row in a second string direction opposite to the first string direction.