Nonvolatile Memory Programming Voltage Adaptation
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Solution Overview
Problem
Nonvolatile memory devices face inefficiencies in programming speed due to varying cell characteristics and program/erase cycles, requiring different program start voltages to optimize pulse application numbers, leading to increased programming time.
Innovation Solution
A method that dynamically adjusts the program start voltage based on the counted pulse application numbers during programming, erasing, or post-programming operations by comparing these numbers to critical values, allowing for recalibration of the voltage to match the specific program speed of each cell or cycle.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a fixed program start voltage is used for all cells, then the programming process is simple, but the programming time increases due to varying cell characteristics and program/erase cycles
Solution Approach 1:
The patent applies dynamics by making the program start voltage adjustable rather than fixed. The control logic dynamically selects different program start voltages based on the number of program/erase cycles and cell characteristics, allowing the system to adapt to varying conditions and optimize programming speed without excessive complexity
Solution Approach 2:
The patent changes the parameter of program start voltage based on the number of program/erase cycles. By selecting different voltage values (e.g., first program start voltage for fewer cycles, second program start voltage for more cycles), the system optimizes programming speed while managing complexity through a structured selection process
2Productivity
If different program start voltages are set for each cell characteristic, then programming efficiency is optimized, but the control complexity increases
Solution Approach 1:
The patent changes the program start voltage parameter based on cell characteristics and program/erase cycle counts. By defining specific voltage values for different conditions (e.g., higher voltage for cells needing more cycles, lower voltage for cells requiring fewer cycles), the system achieves optimized programming efficiency with manageable control logic
Solution Approach 2:
The patent incorporates feedback by monitoring the number of program/erase cycles and cell characteristics, then using this information to select appropriate program start voltages. This feedback mechanism allows the system to adapt to cell performance variations and optimize programming efficiency without requiring overly complex control logic
3Loss of time
If the program start voltage is adjusted based on program pulse application number, then programming time is reduced, but the measurement and control precision requirements increase
Solution Approach 1:
The patent changes the program start voltage parameter based on the counted program pulse application number. By establishing relationships between pulse counts and optimal voltage values, the system reduces programming time while managing measurement precision requirements through predefined voltage selections rather than continuous adjustment
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces programming time by optimizing pulse application and maintaining uniform cell distributions, as it adapts the program start voltage to the unique characteristics and cycle counts of each cell, thereby improving overall efficiency.
Implementation Method 1
performs the program and erase operations by changing the threshold voltage of a cell as electrons are moved by a strong electric field applied to a thin oxide layer
Data Source
AI summary
The present invention relates to a method of programming a nonvolatile memory device. A method of programming a nonvolatile memory device in accordance with an aspect of the present invention can include performing an erase operation, counting an erase pulse application number once the erase operation is completed, comparing the counted erase pulse application number and a reference, defining a program start voltage based on the comparison result, and performing a program operation using the defined program start voltage.