Memory Device Progressive Row Reading Latency Reduction

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Solution Overview

Problem

Current memory devices experience significant initial latency due to propagation delays in pre-charging memory cells, particularly in stand-alone devices with a large number of cells, which limits their scalability and access time.

Innovation Solution

The proposed solution involves grouping memory cells into sets and using a dummy structure and synchronization circuit to pre-charge data items in the first portion of a row without waiting for all cells to be pre-charged, reducing initial latency by enabling early data retrieval from the first portion of the row.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If all memory cells in a row are pre-charged before reading, then data accuracy is ensured, but initial latency increases significantly

Engineering Contradiction:
Improvedata accuracyVSAvoidinitial latency
Core Design Contradiction:
ReliabilityVSLoss of time

Solution Approach 1:

The patent divides a row of memory cells into multiple segments (first portion and second portion). The first portion can be read before the entire row is pre-charged, while the second portion waits for complete pre-charging. This segmentation allows partial data retrieval to reduce latency while maintaining data accuracy for critical portions.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent performs preliminary pre-charging of the first portion of memory cells in a row before the entire row is fully pre-charged. This preliminary action enables early reading of the first portion, reducing initial latency. The system monitors pre-charge completion and selectively enables reading based on which portions are ready.

Inventive Principle:
Principle #10Preliminary action

2Quantity of substance

If the number of memory cells per row is increased to improve capacity, then storage density improves, but propagation delays increase

Engineering Contradiction:
Improvememory capacityVSAvoidpre-charge speed
Core Design Contradiction:
Quantity of substanceVSSpeed

Solution Approach 1:

By segmenting long rows into multiple portions, the patent reduces the effective pre-charge distance for each segment. The first portion can be pre-charged and read faster than waiting for the entire long row, thus maintaining speed while supporting higher overall capacity through increased row length.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent dynamically adjusts the reading strategy based on pre-charge status. Different portions of the row can be read at different times based on when they become ready, rather than waiting for a fixed global pre-charge completion signal. This dynamic approach optimizes access speed for varying row lengths and capacities.

Inventive Principle:
Principle #15Dynamics

3Reliability

If the entire row is pre-charged before reading, then data integrity is maintained, but access time increases

Engineering Contradiction:
Improvedata integrityVSAvoidaccess time
Core Design Contradiction:
ReliabilityVSProductivity

Solution Approach 1:

The patent segments the row into portions with different integrity requirements. The first portion can be read with acceptable integrity before full pre-charge completion, while the second portion waits for complete pre-charging. This selective segmentation maintains data integrity for critical data while improving overall access time.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent changes the pre-charge parameter (voltage level or timing) for different portions of the row. The first portion may use reduced pre-charge timing or voltage thresholds that allow earlier reading, while the second portion uses full pre-charge parameters. This parameter differentiation maintains data integrity where needed while optimizing access time.

Inventive Principle:
Principle #35Parameter changes

Data Source

PatentEP3252776B1Memory device with progressive row reading and related reading method
Publication Date: 2020.03.18 STMICROELECTRONICS SRL
  • EP3252776B1 patent drawingFigure 1~4
  • EP3252776B1 patent drawingFigure 3
  • EP3252776B1 patent drawingFigure 5

AI summary

A memory device including: a memory array (2) with a plurality of memory cells (3) arranged in rows and columns and a plurality of word lines (WL) and bit lines (BL); a dummy structure (30) including a dummy row (38) of dummy cells and a dummy word line (WLD); a first pre-charging stage (5), which biases a word line of the memory array; an output stage (4, 10, 34, 35) including a plurality of sense amplifiers (SA1, SA2, SA3), each sense amplifier generating a corresponding output signal representing a datum stored in a corresponding memory cell pre-charged by the first pre-charging stage; and a second pre-charging stage (32, 36), which biases the dummy word line simultaneously with the word line biased by the first pre-charging stage. The output stage includes an enable stage (34), which detects a state of complete pre-charging of at least one intermediate dummy cell. A first part of the sense amplifiers (SA1, SA2) generate the corresponding output signals following upon sensing of the state of complete pre-charging of the intermediate dummy cell.