Memory Device Rank Control via Voltage Detectors
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Solution Overview
Problem
Current memory devices, such as DRAM, experience increased power consumption due to all ranks being enabled simultaneously, leading to inefficiencies in un-worked ranks.
Innovation Solution
A memory device design incorporating a first and second voltage detector, connected through a through-silicon via, allows for controlled enablement of ranks via a control signal, optimizing power usage by enabling only necessary ranks.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If all ranks are enabled simultaneously in a memory device, then the memory device can operate all ranks, but power consumption increases due to un-worked ranks remaining in enable state
Solution Approach 1:
The patent implements dynamic control of rank enablement by using voltage detectors to monitor input voltage levels and selectively enable only the necessary ranks based on current operating conditions. The control signal dynamically adjusts which ranks are activated, transitioning from a static all-ranks-enabled approach to a dynamic selective-enablement approach that adapts to workload requirements.
Solution Approach 2:
The patent applies local quality by enabling different ranks with different enable states based on their specific needs. Instead of uniformly enabling all ranks, the system selectively activates only the ranks required for current operations, leaving other ranks in a disabled state. This localized enablement strategy reduces overall power consumption while maintaining necessary functionality.
2Use of energy by moving object
If multiple voltage detectors are used to control rank enablement, then power consumption is reduced, but device complexity increases
Solution Approach 1:
The patent segments the voltage detection and control function into multiple independent voltage detectors, each responsible for monitoring specific voltage levels and controlling specific ranks. This segmentation allows for modular implementation where each detector operates independently to manage its associated rank, simplifying the overall control logic while achieving selective enablement.
Solution Approach 2:
The patent introduces voltage detectors as intermediary components between the input voltage source and the rank enablement control. These detectors act as mediators that translate input voltage levels into appropriate control signals for rank enablement, adding a layer of intelligence that automatically manages power consumption without requiring complex external control logic.
Data Source
AI summary
A memory device includes an input pad, a first rank, a second rank, a first voltage detector, and a second voltage detector. The input pad is configured to receive an input voltage. The first voltage detector is coupled to the input pad, the first voltage detector is configured to receive the input voltage, and the first voltage detector is configured to transmit the input voltage to the first rank. The second voltage detector is coupled to the first voltage detector through a first through-silicon via, the second voltage detector is configured to receive the input voltage, and the second voltage detector is configured to transmit the input voltage to the second rank according to a control signal transmitted from the first voltage detector through the first voltage detector, so as to decide a state of the second rank.