Memory Read Apparatus Access Line Potential Control

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Solution Overview

Problem

In semiconductor memory devices, capacitive coupling between access lines can delay read operations by causing the electrical potential of a selected access line to settle before a read operation can occur, and this can lead to channel hot carrier injection, altering data stored in charge storage devices and resulting in read disturb events.

Innovation Solution

Raising the electrical potential of access lines associated with charge storage devices, lowering the potential of a selected access line, and sensing the data state while the potential is being lowered to avoid capacitive coupling issues and reduce the risk of channel hot carrier injection.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Speed

If the electrical potential of access lines is lowered to sense data, then read operation speed is improved, but capacitive coupling causes the potential to settle delaying the read operation

Engineering Contradiction:

Improveread operation speedVSAvoidtime delay due to potential settling

Core Design Contradiction:

SpeedVSLoss of time

Solution Approach 1:

The patent applies preliminary action by raising the electrical potential of access lines before the read operation. This preparatory step establishes a high potential state that prevents capacitive coupling delays during the actual read operation, allowing the selected access line to be lowered and stabilized without settlement delays.

Inventive Principle:

Principle #10Preliminary action

Solution Approach 2:

The patent implements dynamics by dynamically adjusting the electrical potential of access lines throughout the read operation. Access lines are raised to a high potential before reading, then the selected access line is lowered to sense data, creating a dynamic potential transition that eliminates settling delays while maintaining read speed.

Inventive Principle:

Principle #15Dynamics

2Reliability

If access lines are held at high potential to prevent capacitive coupling, then read operation reliability is improved, but energy consumption increases

Engineering Contradiction:

Improveread operation reliabilityVSAvoidenergy consumption of access lines

Core Design Contradiction:

ReliabilityVSUse of energy by moving object

Solution Approach 1:

The patent applies periodic action by raising the electrical potential of access lines only during the specific time window when read operations are performed. After the read operation completes, the potential is lowered to reduce energy consumption. This periodic high-potential state ensures reliability during critical operations while minimizing energy waste during non-operational periods.

Inventive Principle:

Principle #19Periodic action

3Measurement precision

If the selected access line potential is lowered to sense data, then measurement precision is improved, but channel hot carrier injection alters stored data

Engineering Contradiction:

Improvedata sensing precisionVSAvoiddata integrity

Core Design Contradiction:

Measurement precisionVSReliability

Solution Approach 1:

The patent applies preliminary anti-action by raising the potential of non-selected access lines before lowering the selected access line for sensing. This counteracting high potential state prevents channel hot carrier injection that would otherwise occur when the selected line is lowered, thereby protecting data integrity while maintaining sensing precision.

Inventive Principle:

Principle #9Preliminary anti-action

Solution Approach 2:

The patent uses the high potential state of non-selected access lines as an intermediary protective mechanism. This intermediary high potential creates an electric field configuration that prevents harmful carrier injection into the charge storage device during the data sensing process, allowing precise measurement without data corruption.

Inventive Principle:

Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enhances data reliability and speeds up read operations by minimizing the risk of data alteration during read operations, thereby improving the overall performance of semiconductor memory devices.

Implementation Method 1

capacitive coupling between access lines can delay read operations by causing the electrical potential of a selected access line to settle before a read operation can occur

Methodology Applied

Scientific EffectCapacitive coupling: Capacitance

Implementation Method 2

altering data stored in charge storage devices

Methodology Applied

Scientific EffectCharge storage: Electrical Accumulator

Implementation Method 3

this can lead to channel hot carrier injection, altering data stored in charge storage devices

Methodology Applied

Scientific EffectChannel hot carrier injection:

Data Source

PatentUS10964400B2Memory read apparatus and methods

Publication Date: 2021.03.30 MICRON TECHNOLOGY INC

AI summary

Apparatus and methods are disclosed, including a method that raises an electrical potential of a plurality of access lines to a raised electrical potential, where each access line is associated with a respective charge storage device of a string of charge storage devices. The electrical potential of a selected one of the access lines is lowered, and a data state of the charge storage device associated with the selected access line is sensed while the electrical potential of the selected access line is being lowered. Additional apparatus and methods are described.