Integrated Memory Read Path for Faster Bit Decision Transfer

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Solution Overview

Problem

Conventional memory read paths in SRAMs experience delays and occupy significant die space due to multiple stages of logic gates and separate latching and level shifting, which hinder power efficiency and area utilization.

Innovation Solution

An integrated sense mixing and redundancy shift stage with a first transistor, coupled with a logic circuit that processes sense and redundancy signals to minimize delay, and a data latch integrated with a level shifter to shift the bit decision between power domains, reducing the need for separate stages.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If multiple separate stages (sense mixing stage, redundancy shift stage, data latch, level shifter) are used in the memory read path, then the bit decision can be properly processed and transferred between power domains, but the read operation speed is delayed and die space is occupied

Engineering Contradiction:
Improvebit decision processing reliabilityVSAvoidread operation speed
Core Design Contradiction:
ReliabilityVSSpeed

Solution Approach 1:

The patent combines the sense mixing stage, redundancy shift stage, data latch, and level shifter into a single integrated read path circuit. This merging eliminates the delays associated with multiple separate stages while maintaining all necessary functions for reliable bit decision processing and power domain transfer.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The integrated read path circuit performs multiple functions simultaneously: sense mixing, redundancy shifting, data latching, and level shifting. This multi-functionality allows a single circuit to replace multiple separate stages, improving speed without sacrificing reliability.

Inventive Principle:
Principle #6Universality (Multi-functionality)

2Adaptability or versatility

If multiple separate stages are used in the memory read path, then comprehensive data processing and power domain transition are achieved, but the die space is significantly occupied

Engineering Contradiction:
Improvedata processing capabilityVSAvoiddie space
Core Design Contradiction:
Adaptability or versatilityVSArea of stationary object

Solution Approach 1:

The patent merges multiple functional stages into a single integrated circuit structure, significantly reducing the die space required while maintaining comprehensive data processing capabilities and power domain transition functionality.

Inventive Principle:
Principle #5Merging (Combining)

3Adaptability or versatility

If separate sense mixing stage and redundancy shift stage are used, then flexible redundancy handling is achieved, but the read path complexity increases

Engineering Contradiction:
Improveredundancy handling flexibilityVSAvoidread path complexity
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The patent combines the sense mixing and redundancy shift functions into a single integrated stage, reducing read path complexity while maintaining flexible redundancy handling capabilities through unified control logic.

Inventive Principle:
Principle #5Merging (Combining)

Data Source

PatentUS11315609B2Memory with high-speed and area-efficient read path
Publication Date: 2022.04.26 QUALCOMM INC
  • US11315609B2 patent drawing
  • US11315609B2 patent drawing
  • US11315609B2 patent drawing

AI summary

A read path for a memory is provided that includes an integrated sense mixing and redundancy shift stage coupled between a sense amplifier and a data latch. The data latch is integrated with a level shifter.