Memory Read Accuracy via Adjacent Reference-Cell State
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Solution Overview
Problem
Interlayer interference in memory cells due to increased density leads to inaccurate reading, as the edge electric field from programming one memory cell affects adjacent cells, altering their threshold voltage.
Innovation Solution
Determine the discharge duration of a sensing node based on the storage state of a reference memory cell, located adjacent to and programmed after the target cell, to adjust reading parameters and reduce interference effects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If memory cell density is increased to increase storage capacity, then storage capacity is improved, but interlayer interference occurs which deteriorates reading accuracy
Solution Approach 1:
The patent applies preliminary action by reading the reference memory cell before reading the target memory cell. This sequential reading approach allows the system to detect and compensate for interlayer interference effects before they corrupt the target cell reading, thereby maintaining reading accuracy despite high memory density
Solution Approach 2:
The reference memory cell serves as an intermediary element that mediates between the high-density memory structure and the reading operation. By using the reference cell's storage state as a indicator of interference level, the system can adjust reading parameters to compensate for interference effects on adjacent target cells
2Ease of manufacture
If edge electric field is generated during programming to program memory cells, then programming function is achieved, but interference to adjacent memory cells occurs which alters their threshold voltage
Solution Approach 1:
The patent implements feedback by using the storage state of the reference memory cell (which is affected by the edge electric field from programming) to determine the discharge duration for the sensing node during subsequent reading operations. This feedback mechanism allows the system to adaptively compensate for the harmful interference effects
Solution Approach 2:
The patent applies parameter changes by dynamically adjusting the discharge duration of the sensing node based on the reference memory cell's storage state. This parameter adjustment compensates for threshold voltage shifts in target cells caused by interlayer interference during programming
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Improves the accuracy of reading memory cells by mitigating the impact of interlayer interference through targeted discharge duration adjustments.
Implementation Method 1
reading the target memory cell based on the discharge duration of the sensing node corresponding to the target memory cell
Implementation Method 2
an edge electric field generated when programming the memory cells coupled to any word line in the memory may affect the number of electrons stored in the adjacent and programmed memory cells
Data Source
AI summary
The present application discloses a memory, a memory system, and a method for operating memory, which belongs to the memory techniques field. The method for operating memory comprises determining a storage state of a reference memory cell, determining a discharge duration of a sensing node corresponding to a target memory cell based on the storage state of the reference memory cell, and reading the target memory cell based on the discharge duration of the sensing node corresponding to the target memory cell to obtain read results. The target memory cell and the reference memory cell are located in the same string and are adjacent, and the programming order of the reference memory cell is after that of the target memory cell. The present application may reduce the influence on reading memory cells by interlayer interference and improve the accuracy of reading memory cells.