Memory Cell Read Timing for Interlayer Interference Compensation
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Solution Overview
Problem
Interlayer interference in memory cells due to increased density leads to inaccurate reading of memory cells, as the edge electric field from programming one cell affects adjacent cells, altering their threshold voltage.
Innovation Solution
Determine the discharge duration of a sensing node based on the storage state of a reference memory cell, located adjacent to and programmed after the target memory cell, to adjust the reading process and reduce the impact of interlayer interference.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If memory cells are made more dense to increase storage capacity, then storage capacity is improved, but interlayer interference increases causing reading accuracy to deteriorate
Solution Approach 1:
The patent applies preliminary action by determining the storage state of the reference memory cell (programmed after the target cell) before reading the target memory cell. Based on this predetermined information about the reference cell's state, the discharge duration of the sensing node is adjusted in advance to compensate for the interlayer interference that will affect the target cell's reading. This proactive approach allows the system to pre-calculate and pre-adjust parameters to mitigate the harmful effects of interlayer interference before the actual reading occurs.
2Measurement precision
If discharge duration is adjusted based on reference memory cell state, then reading accuracy is improved, but operation complexity increases
Solution Approach 1:
The patent uses the reference memory cell as an intermediary to indirectly measure and characterize the interlayer interference conditions. Instead of directly measuring the interference affecting the target cell, the system reads the reference cell (which was programmed after the target cell and thus experiences similar interference conditions) and uses its storage state as a proxy. This intermediary approach simplifies the operation by providing a straightforward method to determine appropriate discharge duration adjustments without requiring complex direct interference measurements.
Data Source
AI summary
The present disclosure discloses a memory, a memory system, and a method for operating memory, which belongs to the memory techniques field. The method for operating memory comprises determining a storage state of a reference memory cell, determining a discharge duration of a sensing node corresponding to a target memory cell based on the storage state of the reference memory cell, and reading the target memory cell based on the discharge duration of the sensing node corresponding to the target memory cell to obtain read results. The target memory cell and the reference memory cell are located in the same string and are adjacent, and the programming order of the reference memory cell is after that of the target memory cell. The present disclosure may reduce the influence on reading memory cells by interlayer interference and improve the accuracy of reading memory cells.