Memory Refresh Exit Time Reduction via Signal Synchronization
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Solution Overview
Problem
Memory systems experience significant delays when exiting self-refresh mode, which reduces performance due to the inefficiencies in controlling refresh timing between external and internal refresh events.
Innovation Solution
A memory system architecture that includes a refresh control circuit within the memory device, which synchronizes external and internal refresh signals to optimize the timing of refresh operations, allowing for controlled refresh events relative to external signals and reducing the refresh exit latency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by stationary object
If the memory system operates in self-refresh mode to reduce power consumption, then power consumption is reduced, but the refresh exit time increases causing performance degradation
Solution Approach 1:
The memory controller performs preliminary actions by scheduling and initiating refresh operations before the memory device enters self-refresh mode. The controller tracks refresh timestamps and proactively manages the transition out of self-refresh mode, ensuring that refresh operations are completed or scheduled in advance, thereby reducing the actual exit time and minimizing performance impact.
2Reliability
If the memory device performs frequent refresh operations to maintain data integrity, then data reliability is improved, but the time available for other operations decreases reducing productivity
Solution Approach 1:
The system implements periodic refresh operations at precisely calculated intervals based on the refresh rate requirement (e.g., every 64ms for DDR3). The memory controller tracks refresh timestamps and schedules subsequent refresh operations periodically, ensuring data integrity is maintained while minimizing the frequency and duration of refresh interruptions to maximize operational throughput.
Data Source
AI summary
Components of a memory system, such as a memory controller and a memory device, that reduce delay in exiting self-refresh mode by controlling the refresh timing of the memory device. The memory device includes a memory core. An interface circuit of the memory device receives an external refresh signal indicating an intermittent refresh event. A refresh circuit of the memory device generates an internal refresh signal indicating an internal refresh event of the memory device. A refresh control circuit of the memory device performs a refresh operation on a portion of the memory core responsive to the internal refresh event, at a time relative to the intermittent refresh event indicated by the external refresh signal.