Memory Repair Circuit for Adaptive Wordline Redundancy
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Solution Overview
Problem
Volatile memory devices face reliability issues due to failed memory cells during manufacturing, which existing redundancy methods struggle to effectively address with limited resources.
Innovation Solution
A memory device that includes a repair circuit capable of switching between two repair modes: one where corresponding wordline groups in multiple memory banks are repaired together, and another where they are repaired individually, based on the distribution of failed memory cells.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If redundancy memory cells are added to replace failed memory cells, then reliability is improved, but device complexity increases
Solution Approach 1:
The repair circuit is designed to perform multiple repair functions: it can repair failed wordlines in a single memory bank individually, or repair corresponding wordlines across multiple memory banks simultaneously using shared spare wordlines. This multi-functionality allows the same repair circuit to adapt to different failure patterns without requiring separate repair mechanisms for each scenario.
2Reliability
If repair circuits are designed to repair wordlines individually in each memory bank, then reliability is improved through comprehensive coverage, but device complexity and resource usage increase
Solution Approach 1:
The patent merges the repair resources of multiple memory banks by enabling shared spare wordlines. When corresponding wordlines in multiple banks fail, the repair circuit can repair them together using a common spare wordline, thereby reducing the total number of spare wordlines needed compared to individual repair of each bank.
3Productivity
If repair circuits are designed to repair corresponding wordlines in multiple memory banks together, then resource utilization is improved, but adaptability to different failure patterns decreases
Solution Approach 1:
The repair circuit incorporates dynamic selection capability that allows it to switch between different repair modes based on the actual failure pattern detected. The circuit can dynamically choose to repair corresponding wordlines in multiple banks together when that pattern is detected, or switch to individual bank repair when different failure patterns occur, thereby adapting to various scenarios.
Data Source
AI summary
A memory device including a first memory bank including first memory cells connected to a first wordline, a second memory bank including second memory cells connected to a second wordline corresponding to the first wordline, and a repair circuit configured to repair the first wordline and the second wordline together or configured to repair the first wordline or the second wordline individually based on positions of failed memory cells included in the first memory cells and the second memory cells.