Memory Structure Formation Using Sacrificial Material Segmentation
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Solution Overview
Problem
Current manufacturing processes for forming smaller memory cells face challenges such as etch damage and material contamination, which hinder the reliable formation of memory cells at a smaller scale due to secondary effects like erosion and degradation.
Innovation Solution
The use of a sacrificial material in the manufacturing process, which is later removed, allowing for the deposition of memory material with reduced contamination and damage, using techniques like physical vapor deposition (PVD) and reflow to ensure the memory material fills the voids formed, thereby forming smaller memory cells with increased purity and reduced secondary effects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If conventional manufacturing processes are used to form smaller memory cells, then memory cell size is reduced, but etch damage and material contamination increase
Solution Approach 1:
The manufacturing process is divided into separate stages: first forming a sacrificial structure, then performing etching and deposition operations, and finally removing the sacrificial material. This segmentation allows each process step to be optimized independently, reducing cumulative damage to the memory cell structures.
Solution Approach 2:
A sacrificial material is introduced as an intermediary element that occupies the space where memory cells will eventually be formed. This sacrificial material absorbs the harmful effects of etching and deposition processes, protecting the final memory cell structures from damage and contamination.
2Quantity of substance
If memory cell size is reduced to increase storage density, then storage density is improved, but manufacturing reliability deteriorates due to secondary effects
Solution Approach 1:
The sacrificial material is placed in advance to cushion against the harmful effects of manufacturing processes. By having this protective structure in place before etching and deposition, the process absorbs shocks and damage that would otherwise affect the memory cells directly, ensuring reliable formation even at reduced sizes.
Solution Approach 2:
The harmful secondary effects of etching and deposition are converted into benefits by using the sacrificial material as a buffer. The damage that would normally affect memory cells is instead directed at the sacrificial material, which is subsequently removed, leaving cleaner and less damaged memory cell structures.
3Manufacturing precision
If aggressive etching processes are used to form smaller features, then manufacturing precision is improved, but material erosion and contamination increase
Solution Approach 1:
The sacrificial material serves as an intermediary that absorbs the aggressive etching action. By directing the harsh etching process against the sacrificial material rather than the memory cell structures, precise feature formation is achieved without eroding or contaminating the final memory cells.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the formation of smaller memory cells with improved purity and reduced manufacturing-induced defects, enhancing storage density and reliability while reducing power consumption and manufacturing costs.
Implementation Method 1
heating the memory material to cause the memory material to at least partially fill the void in the second channel
Implementation Method 2
depositing a memory material over the two oxide materials and the second channel
Data Source
AI summary
Methods, systems, and devices for techniques for forming memory structures are described. Forming a memory structure may include etching a stack of material including a conductive line, a first electrode and a sacrificial material to divide the stack of material into multiple sections. The process may further include depositing an oxide material in each of the first quantity of channels to form multiple oxide materials. The sacrificial material may be etched to form a second channel between two oxide materials of the multiple oxide materials. Memory material may be deposited over the two oxide materials and the second channel, which may create a void in the second channel between the memory material and the first electrode. The memory material may be heated to fill the void in the second channel.