3D Memory Segmentation With Tailored Word-Line Voltages
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Solution Overview
Problem
Program disturbance and pass voltage disturbance are significant issues in three-dimensional memory structures with multiple layers, leading to higher failure rates.
Innovation Solution
A memory structure is divided into multiple portions, with specific voltage application strategies for each portion during programming to mitigate these disturbances, using a controller to apply tailored voltages to adjacent word lines.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If a three-dimensional structure with multiple layers is used to increase memory capacity, then the storage capacity per unit area is improved, but program disturbance and pass voltage disturbance increase leading to higher programming failure rates
Solution Approach 1:
The memory structure is divided into multiple portions (first portion, second portion, third portion) with different voltage application strategies. Each portion can be independently controlled during programming operations, allowing the controller to apply tailored voltages to minimize disturbance in active regions while maintaining capacity in stacked regions.
Solution Approach 2:
Different voltage levels are applied to different portions of the memory structure during programming operations. The controller selectively applies voltages based on the specific portion being programmed, creating localized optimal conditions for programming while preventing disturbance in other portions.
2Quantity of substance
If the number of layers in a three-dimensional memory structure is increased to store more data, then the data storage density is improved, but program disturbance becomes more significant causing higher failure rates
Solution Approach 1:
The memory is segmented into multiple portions that can be independently addressed and programmed. This segmentation allows the controller to isolate programming operations to specific portions, preventing disturbance from propagating through the entire multi-layer structure to other data storage regions.
Solution Approach 2:
The controller acts as an intermediary that manages voltage application between different portions of the memory. It selectively applies voltages based on the target portion, mediating the programming process to prevent harmful disturbance effects from affecting other layers or portions.
3Quantity of substance
If a three-dimensional memory structure with multiple layers is implemented to increase capacity, then the storage capacity is improved, but pass voltage disturbance occurs during operation
Solution Approach 1:
The memory structure is divided into multiple voltage-controlled portions, allowing the controller to apply different voltage levels to different portions during read operations. This segmentation prevents pass voltage disturbance from affecting the entire structure, isolating the disturbance to only the active portion being read.
Solution Approach 2:
Different voltage levels are applied locally to different portions of the memory during read operations. The controller selectively applies voltages based on which portion is being accessed, creating localized optimal read conditions while preventing pass voltage disturbance in other portions.
Data Source
AI summary
A memory device includes a first deck including a first set of word lines, a second deck including a second set of word lines, and a controller. The controller is coupled to the first deck and configured to during a time period of programming memory cells coupled to a first word line of the first set of word lines, apply a program voltage to the first word line, apply a first pass voltage to a second word line of the second set of word lines during the time period, and apply a second pass voltage to a third word line of the first set of word lines during the time period. The third word line is between the first word line and the second word line. The second pass voltage is greater than the first pass voltage.