Semiconductor Memory Device Select Gate Line Segmentation
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Solution Overview
Problem
Existing semiconductor memory devices face challenges in efficiently reading and storing data due to limitations in the configuration of word lines, select gate lines, and semiconductor columns, which result in increased data volume in selected pages and require multiple read operations to retrieve sequential data.
Innovation Solution
The semiconductor memory device incorporates a configuration where a part of the conductive layers function as word lines and another part as drain-side select gate lines, with optimized lengths and connections to reduce data volume in selected pages and enable simultaneous read operations across multiple pages.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional word line and select gate line configurations are used, then data can be read from memory, but the data volume in selected pages increases and multiple read operations are required
Solution Approach 1:
The conductive layers are segmented into distinct functional groups: some function as word lines while others function as drain-side select gate lines. This segmentation allows for more precise control of data selection and reading operations, enabling reduced data volume in selected pages by activating only the necessary conductive layers for each read operation.
2Productivity
If conventional conductive layer configuration is used, then memory structure is simple, but read operations require multiple steps and sequential data retrieval is inefficient
Solution Approach 1:
The conductive layers are designed with multi-functionality, where different portions of the stacked conductive layer structure serve different purposes (word line functions and select gate line functions). This universal design enables simultaneous read operations across multiple pages by appropriately controlling which conductive layers are activated, thereby improving sequential data retrieval speed without requiring entirely separate structures for each function.
Data Source
AI summary
A semiconductor memory device includes word lines, first and second select gate lines, first and second semiconductor columns, first and second bit lines, and first and second transistors. The word lines are arranged in a first direction. The first and second select gate lines extend in a second direction and overlap with the word lines viewed from the first direction. The first and second select gate lines are arranged in the second direction. The first semiconductor column is opposed to the word lines and the first select gate line. The second semiconductor column is opposed to the word lines and the second select gate line. The first and second bit lines extend in a third direction and overlap with the first and second semiconductor columns viewed from the first direction. The first and second transistors are electrically connected to the first and second select gate lines.