3D Memory Select-Line Separation Pattern for Defect Reduction
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Solution Overview
Problem
The integration and manufacturing processes of three-dimensional nonvolatile memory devices face challenges due to complexity and defects, particularly in separating select lines and maintaining structural integrity.
Innovation Solution
The memory device incorporates a separation pattern system comprising first, second, and third separation patterns to separate select lines, forming trenches and filling them with insulating material, which enhances structural separation and reduces defects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional manufacturing processes are used for 3D memory devices, then integration degree is improved, but select line separation becomes difficult leading to increased complexity and defects
Solution Approach 1:
The patent divides the cell array area into multiple cell areas (first cell area, second cell area, etc.) separated by separation patterns. These separation patterns include first separation patterns extending in a first direction, second separation patterns extending in a second direction, and third separation patterns extending in a third direction, creating a segmented structure that effectively separates select lines while maintaining manufacturing feasibility
Solution Approach 2:
The patent introduces separation patterns extending in multiple directions (first direction, second direction, third direction) to achieve select line separation. By adding dimensional complexity to the separation structure, the patent resolves the contradiction between separation precision and manufacturing complexity
2Reliability
If select lines are separated using conventional methods, then manufacturing defects increase, but the separation effectiveness remains insufficient
Solution Approach 1:
The patent applies different separation patterns at different locations within the cell array area. First separation patterns are used in certain regions, while second and third separation patterns are used in other regions, allowing each area to have optimized local separation characteristics that improve both reliability and separation precision
3Manufacturing precision
If multiple separation patterns are introduced to separate drain select lines, then separation effectiveness is improved, but manufacturing process complexity increases
Solution Approach 1:
The manufacturing process is segmented into distinct steps: forming first trenches for first separation patterns, forming second trenches for second separation patterns, and forming third trenches for third separation patterns. This segmentation of the manufacturing process makes the complex multi-pattern separation more manageable and easier to manufacture
Solution Approach 2:
The patent uses insulating materials as intermediaries filled into the trenches to create the separation patterns. These insulating materials mediate between the different conductive layers, providing effective separation of drain select lines while maintaining a relatively simple manufacturing approach
Data Source
AI summary
A memory device, and a method of manufacturing the same, includes a first select line including a first cell area, a second select line including a second cell area disposed in a first direction from the first cell area, a first separation pattern extending in a second direction intersecting the first direction between the first cell area and the second cell area, second separation patterns extending from both ends of the first separation pattern in the first direction and a third direction opposite the first direction, respectively, and a third separation pattern extending from at least one of the second separation patterns in the second direction, and disposed in a direction opposite the first separation pattern with respect to the at least one second separation pattern.