Memory Device Select Transistor Voltage Shift Detection
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Solution Overview
Problem
Existing storage devices face inefficiencies in performing frequent data damage checks, which can degrade operation performance and compromise data reliability due to the time-consuming nature of checking threshold voltage shifts in memory cells.
Innovation Solution
A memory device and storage device configuration that includes a peripheral circuit to rapidly check threshold voltage shifts in target select transistors by simultaneously applying a reference voltage to target select lines, allowing for efficient detection of data damage through read-values from bit lines and control by a controller.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If frequent check operations are performed to detect data damage, then data reliability is improved, but operation performance deteriorates
Solution Approach 1:
The check operation is segmented into two distinct phases: a rapid threshold voltage shift check that examines only select transistors to detect potential data damage, and a subsequent comprehensive data verification. This segmentation allows the system to perform frequent checks without the full performance penalty of traditional comprehensive checks, thus maintaining data reliability while preserving operation performance.
Solution Approach 2:
The patent performs a preliminary check by detecting threshold voltage shifts in select transistors before conducting full data verification. This preliminary action serves as an early warning system that can identify potential data damage quickly, allowing the system to take preventive measures or prioritize comprehensive checks only when necessary, thereby improving overall system efficiency and maintaining high operation performance.
2Reliability
If comprehensive data checks are performed to ensure data integrity, then data reliability is improved, but check operation time increases
Solution Approach 1:
Instead of performing comprehensive checks on all data, the patent applies partial action by conducting rapid threshold voltage shift checks on select transistors only. This partial check is sufficient to detect potential data damage in most cases, significantly reducing check operation time while maintaining adequate data integrity monitoring. Comprehensive checks are reserved for cases where the preliminary partial check indicates potential issues.
3Reliability
If threshold voltage shifts are detected early to predict data deterioration, then data reliability is improved, but additional check operations increase overhead
Solution Approach 1:
The patent leverages the existing functional components of the memory device (select transistors, bit lines, and control circuits) to perform threshold voltage shift detection. By utilizing components that are already present and operational for normal memory functions, the system can conduct reliability checks without adding significant external complexity or overhead. The existing infrastructure is made to serve dual purposes: normal operation and reliability monitoring.
Data Source
AI summary
A memory device may include a plurality of memory blocks and a peripheral circuit configured to check a shift in threshold voltages of target select transistors by simultaneously applying a reference voltage to target select lines that are coupled to the plurality of memory blocks.