Nonvolatile Memory Sense Amplifier Voltage Parameter Changes
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Solution Overview
Problem
Current nonvolatile memory devices face challenges in reducing complexity and size while maintaining effective data storage capabilities, particularly in distinguishing data stored in memory cells using reference cells that store different states.
Innovation Solution
The proposed nonvolatile memory device employs a sense amplifier circuit that applies distinct read voltages to bit lines, allowing for the comparison of current flows through memory cells and reference cells to determine data states, thereby reducing the need for multiple reference states and simplifying the circuit design.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If multiple reference memory cells storing different states are used to distinguish data, then data distinction capability is improved, but device complexity and size increase
Solution Approach 1:
The patent applies parameter changes by using different read voltages (first read voltage and second read voltage) applied to different bit lines to distinguish data states. Instead of using multiple reference cells with different stored states, the invention changes the voltage parameter to achieve the same distinction function, thereby reducing complexity while maintaining measurement precision.
2Measurement precision
If multiple reference memory cells storing different states are used to distinguish data, then data distinction capability is improved, but device size increases
Solution Approach 1:
The invention replaces the need for multiple reference memory cells with a parameter-based approach using different read voltages on different bit lines. This eliminates the requirement for additional reference cells and their associated circuitry, thereby reducing the overall device area while preserving the ability to distinguish between stored data states.
3Measurement precision
If multiple reference memory cells storing different states are used to distinguish data, then data distinction capability is improved, but manufacturing complexity increases
Solution Approach 1:
The patent simplifies manufacturing by replacing multiple reference memory cells with a voltage-based distinction mechanism. The manufacturing process no longer requires precise fabrication and testing of multiple reference cells with different stored states, but rather involves implementing different read voltage levels on different bit lines, which is a simpler and more manufacturable approach.
Data Source
AI summary
A nonvolatile memory device includes: first memory cells connected to a first source line and a first bit line; second memory cells connected to a second source line and a second bit line; and a sense amplifier circuit connected to the first and second source lines and the first and second bit lines. The sense amplifier circuit includes: a first sense amplifier configured to apply a first read voltage to the first bit line and output a first amount of current of a selected first memory cell; a second sense amplifier configured to apply a second read voltage to the second bit line and output a second amount of current of a selected second memory cell; and a comparator configured to compare the first amount of current with the second amount of current to identify data of the selected first memory cell.