Memory Sense Operation for Error Correction Data Measurement

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Solution Overview

Problem

Existing memory technologies face read latency issues due to the need for additional sense operations to accurately determine the threshold voltage range of a memory cell, leading to potential misreads and increased error correction requirements.

Innovation Solution

A method involving multiple measurements with a single memory sense operation using a first word line sensing voltage, followed by adjustments to determine error correction data, allowing for more precise positioning of the stored threshold voltage within a range, thereby reducing read latency and improving data accuracy.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If additional sense operations are performed to measure soft data for error correction, then data accuracy is improved, but read latency increases

Engineering Contradiction:
Improvedata accuracyVSAvoidread latency
Core Design Contradiction:
Measurement precisionVSLoss of time

Solution Approach 1:

The patent combines multiple measurements (data measurement and soft data measurement) into a single sense operation. The sense amplifier performs both the primary data read and the error correction information measurement simultaneously by utilizing the same sensing event, thereby eliminating the need for separate sense operations and reducing read latency while maintaining data accuracy

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The sense amplifier is designed to perform multiple functions within a single operation: it measures both the primary data value (hard data) and the error correction information (soft data) during the same sensing event. This multi-functionality allows the system to obtain both data accuracy and error correction capabilities without increasing the number of sense operations

Inventive Principle:
Principle #6Universality (Multi-functionality)

2Measurement precision

If multiple sense operations are used to determine threshold voltage range, then measurement precision is improved, but device complexity increases

Engineering Contradiction:
Improvethreshold voltage measurement precisionVSAvoidsense operation complexity
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The patent merges multiple measurement objectives into a single sense operation structure. By using the same sense amplifier and sensing event to obtain both data values and error correction information, the system reduces the complexity associated with coordinating multiple separate sense operations while maintaining high measurement precision through integrated measurement

Inventive Principle:
Principle #5Merging (Combining)

3Reliability

If error correction data is collected through additional measurements, then reliability is improved, but productivity decreases

Engineering Contradiction:
Improveerror correction capabilityVSAvoidread speed
Core Design Contradiction:
ReliabilityVSProductivity

Solution Approach 1:

The patent ensures continuous useful action by performing both data reading and error correction measurement during the same sense operation. This eliminates idle time between operations and maintains continuous productive work, thereby improving read speed while still collecting comprehensive error correction data for enhanced reliability

Inventive Principle:
Principle #20Continuity of useful action

Data Source

PatentUS9299459B2Method and apparatus of measuring error correction data for memory
Publication Date: 2016.03.29 MACRONIX INTERNATIONAL CO LTD
  • US9299459B2 patent drawing
  • US9299459B2 patent drawing
  • US9299459B2 patent drawing

AI summary

Multiple measurements are made with one memory sense operation having a first word line sensing voltage on a memory cell. The multiple measurements include a first measurement, of whether the memory cell stores either: (a) data corresponding to a first set of one or more threshold voltage ranges below the first word line sensing voltage of the one memory sense operation, or (b) data corresponding to a second set of one or more threshold voltage ranges above the first word line sensing voltage of the one memory sense operation. The multiple measurements include a second measurement, of error correction data of the memory cell indicating relative position within a particular threshold voltage range of a stored threshold voltage in the memory cell.