Memory Control Signal Timing Using Word-Line Tracking Wiring

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

In high-capacity memory devices, the control signal generator fails to activate modulation circuits at the correct timing due to varying arrival times of control signals across long word lines, leading to issues such as degraded read/write margins, increased crowbar current, and instability of bit cells.

Innovation Solution

The control signal generator adjusts its timing based on the depth distance between the first and last word lines, using tracking wiring to delay control signals appropriately, ensuring synchronized activation of modulation circuits with word line signals.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If control signals are transmitted across long word lines in high-capacity memory devices, then memory capacity is increased, but control signals arrive at different times at different word lines causing timing errors

Engineering Contradiction:
Improvememory capacityVSAvoidtiming precision
Core Design Contradiction:
Quantity of substanceVSManufacturing precision

Solution Approach 1:

The patent applies preliminary action by delaying control signals in advance based on predicted propagation times. The control signal generator calculates expected arrival times at different word lines and pre-delays signals accordingly, so that all modulation circuits are activated simultaneously despite varying signal path lengths. This resolves the timing precision issue while maintaining high memory capacity.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent changes the timing parameter of control signals dynamically based on word line position. By adjusting the delay parameter proportionally to the depth distance from the first word line, the system compensates for signal propagation variations. This parameter adjustment ensures synchronized activation of modulation circuits across the entire memory array, resolving the timing error problem.

Inventive Principle:
Principle #35Parameter changes

2Productivity

If modulation circuits are activated too early, then read/write operations can proceed, but read/write margins are degraded and crowbar current increases

Engineering Contradiction:
Improveoperational speedVSAvoidread/write margin
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The patent uses feedback by monitoring the actual arrival times of control signals at different word lines and adjusting the delay parameters accordingly. The control signal generator incorporates feedback about signal propagation characteristics to fine-tune the timing of modulation circuit activation. This ensures optimal timing that maintains read/write margins while enabling operations to proceed, resolving the contradiction between speed and reliability.

Inventive Principle:
Principle #23Feedback

3Manufacturing precision

If control signals are delayed to synchronize modulation circuit activation, then timing precision is improved, but signal transmission complexity increases

Engineering Contradiction:
Improvetiming precisionVSAvoidsignal transmission complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent applies local quality by implementing different delay amounts for different word lines based on their specific positions. Rather than using a uniform delay for all signals, the system tailors the delay parameter to each word line's depth distance from the first word line. This localized approach achieves precise synchronization while minimizing overall system complexity, as each delay is optimized only for its specific context.

Inventive Principle:
Principle #3Local quality

Data Source

PatentUS12469531B2Signal generator for controlling timing of signal in memory device
Publication Date: 2025.11.11 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US12469531B2 patent drawing
  • US12469531B2 patent drawing
  • US12469531B2 patent drawing

AI summary

A device includes a memory array, bit line pairs, word lines, a modulation circuit and a control signal generator. The memory array has bit cells arranged in rows and columns. Each bit line pair is connected to a respective column of bit cells. Each word line is connected to a respective row of bit cells. The modulation circuit is coupled with at least one bit line pair. The control signal generator is coupled with the modulation circuit. The control signal generator includes a tracking wiring with a tracking length positively correlated with a depth distance of the word lines. The control signal generator is configured to produce a control signal, switching to a first voltage level for a first time duration in reference with the tracking length, for controlling the modulation circuit. A method of controlling aforesaid device is also disclosed.