Semiconductor Memory Standby Voltage Clamping Circuit
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Solution Overview
Problem
Conventional semiconductor memory devices face challenges in reducing standby current, particularly in mobile applications where power efficiency is critical, as existing technologies struggle to minimize current consumption during standby mode without compromising operational stability.
Innovation Solution
The semiconductor memory device employs a standby voltage providing unit with cascade-coupled transistors, including depletion-type and enhancement-type NMOS transistors, to double-clamp an external voltage, providing internal voltages at reduced levels during standby mode, thereby reducing current consumption without the need for separate standby drivers or reference voltage generators.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional internal voltage generators with separate standby drivers are used, then stable internal voltage is provided during standby mode, but standby current consumption is high
Solution Approach 1:
The patent merges the standby driver functionality into the main voltage generator circuit by using a depletion-type NMOS transistor that automatically provides standby voltage without requiring a separate standby driver circuit. This integration eliminates the need for additional standby drivers while maintaining stable internal voltage during standby mode, thereby reducing standby current consumption.
Solution Approach 2:
The patent changes the electrical parameters of the voltage generator by introducing a depletion-type NMOS transistor with specific threshold voltage characteristics. This transistor operates in a subthreshold region during standby mode, providing a controlled leakage current that maintains stable internal voltage while consuming minimal power, thus resolving the contradiction between voltage stability and current consumption.
2Use of energy by moving object
If external voltage is directly used without internal voltage conversion, then power consumption is reduced, but internal voltage stability under voltage changes is compromised
Solution Approach 1:
The patent implements a self-regulating voltage generation system where the depletion-type NMOS transistor automatically adjusts its operation based on the external voltage level. The transistor's threshold voltage characteristics enable it to maintain stable internal voltage output without requiring external control circuits or additional power management components, thus achieving both low power consumption and voltage stability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly reduces standby current and enhances power efficiency by maintaining a stable internal voltage level despite variations in external voltage, improving overall power management in semiconductor memory devices.
Implementation Method 1
a standby voltage providing unit configured to receive an external voltage, primarily clamp and secondarily clamp a predetermined voltage, and provide the predetermined voltage as an internal voltage
Data Source
AI summary
A semiconductor memory device includes a standby voltage providing unit. The standby voltage providing unit is configured to receive an external voltage, primarily clamp and secondarily clamp a predetermined voltage, and provide the predetermined voltage as an internal voltage, during a standby mode.