Semiconductor Memory Sub-Arrays with Dedicated Peripheral Circuits

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Contemporary memory systems face challenges in meeting increasing demands for data access speed and accuracy due to the complexity of accommodating different data types and characteristics with various memory types, requiring efficient data access solutions.

Innovation Solution

A semiconductor memory device with multiple sub-memory cell arrays, each optimized for specific data characteristics, and associated peripheral circuits for targeted read and write operations, allowing for differentiated data access approaches and reduced power consumption.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If multiple memory types are used to accommodate different data types and characteristics, then data access performance and accuracy are improved, but system complexity increases

Engineering Contradiction:
Improvedata access accuracyVSAvoidmemory system complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The memory cell array is divided into multiple sub-memory cell arrays (first sub-memory cell array, second sub-memory cell array, etc.), where each sub-array is optimized for specific data characteristics. This segmentation allows different data types to be stored in specialized memory regions, improving access accuracy and performance while maintaining a unified memory device structure that manages complexity.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different sub-memory cell arrays are designed with different characteristics optimized for specific data types (e.g., first sub-array for first data characteristics, second sub-array for second data characteristics). This local quality differentiation enables each region to excel at its specific function, improving overall system reliability without requiring complete heterogeneity across the entire system.

Inventive Principle:
Principle #3Local quality

2Speed

If multiple memory types are used to accommodate different data types, then data access speed is improved, but device complexity increases

Engineering Contradiction:
Improvedata access speedVSAvoidmemory device complexity
Core Design Contradiction:
SpeedVSDevice complexity

Solution Approach 1:

The memory cell array is segmented into multiple sub-arrays, each optimized for specific data access patterns and characteristics. This allows parallel access to different data types through dedicated peripheral circuits, improving overall access speed while distributing the complexity across modular units rather than requiring a monolithic complex design.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Each sub-memory cell array is designed with local quality optimized for its specific data type, enabling faster access for that particular data characteristic. The differentiated design allows each region to operate at optimal speed for its function without compromising the entire system's performance.

Inventive Principle:
Principle #3Local quality

3Productivity

If separate peripheral circuits are used for each sub-memory cell array, then data access efficiency is improved, but device complexity increases

Engineering Contradiction:
Improvedata access efficiencyVSAvoidcircuit complexity
Core Design Contradiction:
ProductivityVSDevice complexity

Solution Approach 1:

Peripheral circuits are segmented and assigned to specific sub-memory cell arrays (first peripheral circuit for first sub-array, second peripheral circuit for second sub-array). This segmentation enables parallel operation and specialized optimization for different data types, improving overall productivity while organizing complexity into manageable, functionally-specific modules.

Inventive Principle:
Principle #1Segmentation

Data Source

PatentUS9384092B2Semiconductor memory device with multiple sub-memory cell arrays and memory system including same
Publication Date: 2016.07.05 SAMSUNG ELECTRONICS CO LTD
  • US9384092B2 patent drawing
  • US9384092B2 patent drawing
  • US9384092B2 patent drawing

AI summary

A semiconductor memory device includes; a memory cell array comprising a first sub-memory cell array storing first data having a first characteristic and a second sub-memory cell array storing second data having a second characteristic different from the first characteristic, a first peripheral circuit operatively associated with only the first sub-memory cell array to execute at least one of a read operation and a write operation directed to a target memory cell of the first sub-memory cell array, and a second peripheral circuit operatively associated with only the second sub-memory cell array to execute at least one of a read operation and a write operation directed to a target memory cell of the second sub-memory cell array.