Memory Component Sub-Row Writes Without Pre-Write Sensing
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Solution Overview
Problem
Existing memory devices face challenges in efficiently accessing data while minimizing power consumption and heat generation, particularly in environments with power constraints, such as mobile devices and cryogenic computers, due to unnecessary operations like sensing data before writing.
Innovation Solution
A DRAM memory device is configured to perform a minimal set of operations by writing data directly to sense amplifiers without initially sensing data from memory elements, especially when writing to an entire sub-row, thereby reducing power consumption and access time.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If data is sensed from memory elements before writing to sense amplifiers, then data integrity is maintained, but power consumption increases and access time increases
Solution Approach 1:
The patent extracts and eliminates the unnecessary sensing operation from the write path. When a write operation targets an entire sub-row, the sensing step is completely removed, allowing data to be written directly to the sense amplifiers without first being sensed from the memory elements, thereby reducing power consumption while maintaining data integrity through direct write paths.
Solution Approach 2:
The patent applies partial action by selectively eliminating the sensing step only for write operations that target entire sub-rows, while maintaining the sensing step for other write operations that may require data integrity verification. This conditional approach optimizes power consumption without compromising reliability when needed.
2Measurement precision
If data is sensed from memory elements before writing to sense amplifiers, then data accuracy is ensured, but access time increases
Solution Approach 1:
The sensing operation is extracted and removed from the write path for entire sub-row writes, eliminating the time penalty associated with sensing. The write operation proceeds directly from the write buffer to the sense amplifiers, significantly reducing access time while maintaining data accuracy through the direct write path.
Solution Approach 2:
The sensing step is partially applied only when necessary for data accuracy, specifically for write operations that do not target entire sub-rows. For entire sub-row writes, the sensing step is completely omitted, achieving maximum speed improvement without compromising accuracy where needed.
3Reliability
If unnecessary sensing operations are performed during write, then data verification is achieved, but heat generation increases
Solution Approach 1:
The unnecessary sensing operation is extracted and removed from the write path for entire sub-row operations, eliminating the source of heat generation. By writing data directly to the sense amplifiers without sensing, the patent reduces the number of active operations and associated heat generation while maintaining data verification through the write operation itself.
4Reliability
If traditional write operations are used, then data integrity is maintained, but operational speed decreases
Solution Approach 1:
The sensing step is extracted and removed from the write path for entire sub-row writes, creating a streamlined write operation that proceeds directly from the write buffer to the sense amplifiers. This eliminates the time penalty of sensing while maintaining data integrity, thereby significantly improving operational speed.
Solution Approach 2:
The sensing operation is partially applied only when data integrity verification is actually needed, rather than universally for all write operations. This selective approach allows the patent to achieve maximum speed improvement for entire sub-row writes while maintaining data integrity verification when required.
Data Source
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AI summary
A memory component includes a first memory bank. The first memory bank has a plurality of sub-arrays having sub-rows of memory elements. The memory component includes a write driver, coupled to the first memory bank, to perform a write operation of an entire sub-row of a sub-array. To perform the write operation, the write driver is to load a burst of write data to the memory bank. The memory bank may then activate a plurality of sense amplifiers associated with a plurality of memory elements of the entire sub-row to load the burst of write data to the plurality of sense amplifiers.