Memory Array Switch Layout for Dense I/O Contact Spacing

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

As integration density of semiconductor memory devices increases, the hierarchical organization of input/output (I/O) lines becomes challenging due to the need for multiple contacts and contact pads, which can reduce efficiency and increase complexity.

Innovation Solution

The semiconductor integrated circuit device incorporates a rotated switch configuration for memory cell arrays, where the first and second switches are rotated 180 degrees relative to each other, optimizing the arrangement of sense amplifiers and selection transistors to minimize the need for dummy patterns and maintain sufficient spacing between contacts.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If hierarchical organization of I/O lines is implemented with multiple contacts and contact pads, then data transmission capability is improved, but device complexity and manufacturing difficulty increase

Engineering Contradiction:
Improvedata transmission capabilityVSAvoidstructural complexity
Core Design Contradiction:
ProductivityVSDevice complexity

Solution Approach 1:

The patent applies asymmetry by rotating adjacent switches 180 degrees relative to each other, creating an asymmetric arrangement that optimizes contact spacing. This asymmetric configuration allows contacts to be positioned more efficiently, reducing the need for dummy patterns while maintaining hierarchical I/O line functionality.

Inventive Principle:
Principle #4Asymmetry

Solution Approach 2:

The patent utilizes spatial arrangement in multiple dimensions by alternating the orientation of switches in adjacent columns. This dimensional approach to layout optimization allows contacts to be distributed more evenly across the device structure, reducing complexity in any single dimension while maintaining overall functionality.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Productivity

If integration density is increased, then device functionality is improved, but contact spacing becomes insufficient

Engineering Contradiction:
Improveintegration densityVSAvoidcontact spacing
Core Design Contradiction:
ProductivityVSLength of moving object

Solution Approach 1:

By rotating switches alternately in adjacent columns, the patent creates an asymmetric pattern that distributes contacts more uniformly across the device. This asymmetric arrangement maximizes the use of available space, allowing sufficient contact spacing to be maintained even as integration density increases.

Inventive Principle:
Principle #4Asymmetry

Solution Approach 2:

The patent inverts the conventional approach by rotating switches 180 degrees relative to adjacent switches rather than maintaining uniform orientation. This inversion strategy optimizes the spatial distribution of contacts, ensuring adequate spacing is achieved while maximizing integration density.

Inventive Principle:
Principle #13The other way round (Inversion)

Data Source

PatentUS20260052680A1Semiconductor integrated circuit device
Publication Date: 2026.02.19 SK HYNIX INC
  • US20260052680A1 patent drawing
  • US20260052680A1 patent drawing
  • US20260052680A1 patent drawing

AI summary

A semiconductor integrated circuit device includes a first memory cell array and a second memory cell array each including a plurality of word lines extending in a first direction, a plurality of bit lines extending in a second direction perpendicular to the first direction, and a plurality of memory cells connected between the plurality of word lines and the plurality of bit lines; a first switch configured to selectively connect a first plurality of sense amplifiers that are connected to bit lines among the plurality of bit lines of the first memory cell array with data input/output (I/O) lines; and a second switch configured to selectively connect a second plurality of sense amplifiers that are connected to bit lines of the plurality of bit lines of the second memory cell array with the data I/O lines; wherein the first memory cell array and the second memory cell array are spaced apart in the first direction; and wherein the first switch is rotated 180 degrees with respect to the second switch.