Nonvolatile Memory Temperature Compensation Segmentation
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Solution Overview
Problem
Current data storage devices using nonvolatile memory devices face limitations in writing speed due to the need for temperature compensation operations, which can slow down data processing and access times.
Innovation Solution
A data storage device architecture that divides its memory cell region into two types: a first region with single-level cells for faster programming and a second region with multi-level cells, where temperature compensation is only performed during main program operations, allowing buffer program operations to omit temperature compensation for increased speed.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If temperature compensation operation is performed during all program operations, then reliability is improved, but writing speed deteriorates
Solution Approach 1:
The memory cell region is divided into a first region and a second region, allowing different program operations (buffer program and main program) to be performed on different regions with different temperature compensation requirements, thus resolving the contradiction between reliability and writing speed
Solution Approach 2:
Temperature compensation operation is performed partially - only during main program operation on the second region, rather than during all program operations on all regions. This partial application maintains reliability where needed while improving overall writing speed
2Speed
If single-level cells are used in all regions, then writing speed is improved, but storage capacity and efficiency deteriorate
Solution Approach 1:
Different types of memory cells are used in different regions: single-level cells in the first region for fast programming, and multi-level cells in the second region for higher storage capacity. Each region has optimized local characteristics suitable for its intended function
Data Source
AI summary
A data storage device includes a nonvolatile memory device including a memory cell region which is divided into a first region and a second region; and a controller configured to control a program operation of the nonvolatile memory device according to a write request of an external device, wherein the controller provides a temperature compensation off command to the nonvolatile memory device before providing data, a program command for commanding program of the data and an address of the first region to the nonvolatile memory device, and wherein, while programming the data in a memory cell corresponding to the address of the first region according to the program command for commanding program of the data, the nonvolatile memory device omits a temperature compensation operation of changing a program verify operation to be applied to the memory cell, according to a temperature variation.