Semiconductor Memory Temperature Sensing Power Save Mode

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Solution Overview

Problem

Conventional semiconductor memory devices face issues with accurate temperature sensing due to noise interference, leading to erroneous data retention and increased power consumption, as the existing temperature sensing devices are unable to isolate the current temperature effectively, causing errors in refresh cycles and data loss.

Innovation Solution

A semiconductor memory device that includes a temperature sensing device capable of entering a power save mode with minimal power consumption, using a control signal to activate the temperature sensing unit, and employing a tracking ADC to convert analog signals into digital values during a noise-free section, ensuring accurate temperature measurement without noise interference.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If the temperature sensing device operates continuously to accurately sense temperature, then temperature measurement precision is improved, but power consumption increases

Engineering Contradiction:
Improvetemperature measurement precisionVSAvoidpower consumption
Core Design Contradiction:
Measurement precisionVSUse of energy by moving object

Solution Approach 1:

The temperature sensing device operates periodically rather than continuously. The sensing operation is triggered by a control signal that activates the device only when temperature measurement is required, allowing the device to enter a low-power state between measurements. This periodic operation maintains measurement capability while significantly reducing overall power consumption.

Inventive Principle:
Principle #19Periodic action

2Speed

If the temperature sensing device operates during active mode to sense temperature, then temperature sensing speed is improved, but noise interference increases causing measurement errors

Engineering Contradiction:
Improvetemperature sensing speedVSAvoidtemperature measurement accuracy
Core Design Contradiction:
SpeedVSMeasurement precision

Solution Approach 1:

The device enters a power save mode before performing temperature sensing to preemptively eliminate noise interference. By transitioning to a low-power state in advance of the measurement operation, the system ensures that no noisy switching activity occurs during the critical sensing window, thereby guaranteeing measurement accuracy while still achieving timely temperature readings.

Inventive Principle:
Principle #10Preliminary action

3Reliability

If the refresh cycle is shortened to prevent data loss, then data retention reliability is improved, but power consumption increases

Engineering Contradiction:
Improvedata retention reliabilityVSAvoidpower consumption
Core Design Contradiction:
ReliabilityVSUse of energy by moving object

Solution Approach 1:

The system uses temperature sensing feedback to dynamically adjust the refresh cycle duration. When the sensed temperature indicates lower thermal conditions (which correlate with slower charge leakage), the system can extend the refresh interval. Conversely, at higher temperatures where leakage is faster, the refresh cycle is shortened. This feedback-based adaptation maintains data reliability while optimizing power consumption by avoiding unnecessarily frequent refreshes.

Inventive Principle:
Principle #23Feedback

Data Source

PatentUS8355288B2Semiconductor memory device with temperature sensing device capable of minimizing power consumption in refresh
Publication Date: 2013.01.15 SK HYNIX INC
  • US8355288B2 patent drawing
  • US8355288B2 patent drawing
  • US8355288B2 patent drawing

AI summary

A semiconductor memory device capable of measuring a temperature without the influence of noise includes a temperature sensing device for sensing a current temperature in response to a control signal, wherein the semiconductor memory device enters a power save mode for a predetermined time starting from an activation of the control signal and wherein the power save mode has substantially no power consumption. A method for driving a semiconductor memory device in accordance with the present invention includes sensing a current temperature in response to a control signal and entering a power save mode for a predetermined time starting from an activation of the control signal, wherein the power save mode has substantially no power consumption.