Memory Structure with Localized Thermal Global Erase
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Solution Overview
Problem
Existing technologies face challenges in securely, safely, and rapidly erasing all data from nonvolatile memory structures, particularly in situations where complete data destruction is necessary, such as in military applications or sensitive environments, without causing damage to surrounding components.
Innovation Solution
Incorporating energy-release materials like thermite, nano-thermite, or metallic multi-layer structures within or near the memory structure to initiate an exothermic reaction that raises the temperature sufficiently to irreversibly erase data while confining the heat effect to the memory structure, thereby avoiding damage to surroundings.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If energy-release material is used to rapidly erase data from nonvolatile memory, then data erasure speed and security are improved, but risk of fire or explosion increases
Solution Approach 1:
The patent applies local quality by using a thermal barrier material with specific heat capacity and thermal conductivity properties positioned between the energy-release material and the memory structure. This creates a localized thermal management solution where the barrier material absorbs and confines heat specifically at the interface between the energy-release material and memory structure, preventing heat propagation to surrounding components while maintaining rapid data erasure capability.
Solution Approach 2:
The thermal barrier material serves as an intermediary element between the energy-release material and the memory structure. It mediates the thermal interaction by absorbing excess heat from the energy-release material and preventing direct heat transfer to the memory structure and surrounding components, thus enabling safe use of high-energy erasure methods.
2Reliability
If high temperature is applied to erase all data from memory structure, then data security is improved, but damage to surrounding components increases
Solution Approach 1:
The thermal barrier material creates a localized thermal protection zone around the memory structure. By positioning the barrier material with specific thermal properties adjacent to the memory structure, heat is confined to a localized region, allowing high temperature application for secure data erasure without propagating heat to surrounding components.
Solution Approach 2:
The thermal barrier material provides beforehand cushioning by being pre-positioned between the energy-release material and the memory structure. It acts as a protective cushion that absorbs and dissipates thermal energy before it can reach and damage the memory structure or surrounding components, enabling safe high-temperature erasure operations.
3Object-affected harmful factors
If conventional erase operations are used, then safety is maintained, but complete data destruction is not achieved
Solution Approach 1:
The thermal barrier material enables the use of high-energy erasure methods by mediating the thermal interaction. It allows the energy-release material to generate sufficient heat for complete data destruction while preventing harmful heat propagation, thus achieving both complete data destruction and safety.
Solution Approach 2:
The invention changes the thermal parameters of the system by introducing a thermal barrier material with specific heat capacity and thermal conductivity. This parameter change enables the system to withstand and control high temperatures required for complete data destruction while maintaining safety through controlled heat distribution.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution ensures rapid and secure data erasure without causing fires or explosions, ensuring safety in sensitive environments like aircraft or submarines.
Implementation Method 1
an energy-release material in the memory die, the exothermic reaction of which raises a temperature of the memory structure above a threshold temperature
Implementation Method 2
temperature above some threshold temperature may change a physical characteristic of a data storage material to cause the stored data to become unrecoverable
Data Source
AI summary
A memory structure is located on a substrate. The memory structure includes electrically conductive lines connected to memory cells with electrically insulating material between the electrically conductive lines. The memory structure further includes an energy-release material in at least one of the electrically conductive lines, the memory cells, the electrically insulating material or the substrate.