Semiconductor Memory Threshold Voltage Control for Low Power Access
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Solution Overview
Problem
Semiconductor memory apparatuses face challenges in transferring data from unit cells to bit lines due to insufficient word-line driving voltage, leading to delayed sensing and amplification, especially when external source voltage levels are reduced, causing issues with switching MOS transistors not turning on in time.
Innovation Solution
A semiconductor memory apparatus with a threshold voltage control unit that temporarily supplies a first bulk voltage to the switching MOS transistor, reducing its threshold voltage to facilitate data transfer, including a bank bulk voltage supply unit and a command control unit to manage this process, ensuring efficient data transfer even at low external source voltages.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If the external source voltage level is reduced to lower power consumption, then power consumption is reduced, but the switching MOS transistor cannot be turned on in sufficient time and data transfer to bit line fails
Solution Approach 1:
The patent changes the threshold voltage parameter of the switching MOS transistor dynamically by applying different bulk voltages. During data transfer operations, a first bulk voltage is applied to reduce the threshold voltage, enabling reliable switching even with low external source voltage. During non-transfer periods, a second bulk voltage is applied to restore the threshold voltage to normal levels, maintaining power efficiency.
2Use of energy by moving object
If the external source voltage level is reduced to reduce power consumption, then power consumption is reduced, but the sensing and amplification time increases
Solution Approach 1:
The patent dynamically adjusts the threshold voltage of the switching MOS transistor by changing the bulk voltage parameter. By reducing the threshold voltage during data transfer, the transistor switches faster, which accelerates the overall data access process including sensing and amplification, thereby reducing time loss while maintaining low power consumption.
3Use of energy by moving object
If the word-line driving voltage is insufficient, then power consumption is reduced, but the MOS transistor cannot be turned on and data access fails
Solution Approach 1:
The patent compensates for insufficient word-line driving voltage by dynamically adjusting the threshold voltage parameter of the switching MOS transistor through bulk voltage control. When data transfer is required, the threshold voltage is reduced to enable the transistor to turn on reliably even with low word-line voltage, ensuring data access productivity is maintained while keeping power consumption low.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables smooth on/off operation of switching MOS transistors with low external source voltage, improving data access speed and reducing power consumption by optimizing the bulk voltage supply to lower the threshold voltage during data transfer, thus enhancing sensing and amplification efficiency.
Implementation Method 1
a bulk voltage supply unit that supplies a first bulk voltage to a bulk of the MOS transistor
Data Source
AI summary
A semiconductor memory apparatus includes: a cell region having a plurality of unit cells each of which has a switching MOS transistor for transferring data. A peripheral circuit unit accesses data stored in the unit cell. A threshold voltage control unit controls the threshold voltage of the switching MOS transistor.