Semiconductor Memory Timing Control for Temperature and Voltage Variation

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Solution Overview

Problem

Existing semiconductor memory devices face challenges in controlling operation timing effectively across varying environmental conditions such as temperature and power supply voltage, as they rely solely on the number of rising or falling edges from a ring oscillator, which is insufficient for meeting diverse performance requirements and adapting to environmental changes during operation.

Innovation Solution

Incorporating a temperature sensor and voltage detection portion to dynamically control operation timing based on detected temperature and power supply voltage, using a look-up table to adjust timing settings, allowing for real-time adaptation to environmental conditions and ensuring proper operation timing across different scenarios.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If operation timing is controlled only by the number of rising or falling edges from a ring oscillator, then the control method is simple, but it cannot meet diverse performance requirements under various temperature and voltage conditions

Engineering Contradiction:
Improveadaptability to temperature and voltage conditionsVSAvoidcontrol system complexity
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The patent implements dynamic operation timing control by continuously monitoring temperature and voltage conditions during operation and adjusting timing parameters in real-time. The control portion dynamically selects appropriate timing values from stored data based on current environmental conditions, enabling the system to adapt to changing temperature and voltage scenarios while maintaining reliable operation.

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The patent changes the operating parameters (timing values) based on detected environmental conditions (temperature and voltage). By storing multiple sets of timing parameters corresponding to different temperature-voltage scenarios and selecting the appropriate set based on current conditions, the system achieves adaptability without requiring complex real-time calculations.

Inventive Principle:
Principle #35Parameter changes

2Reliability

If operation timing is controlled only once after power is applied, then the control process is simple, but it cannot appropriately control timing according to environmental variations during operation

Engineering Contradiction:
Improvetiming control reliability under environmental variationsVSAvoidcontrol frequency
Core Design Contradiction:
ReliabilityVSProductivity

Solution Approach 1:

The patent implements a feedback mechanism where the temperature sensor and voltage detection portion continuously monitor environmental conditions during operation. Based on this feedback, the control portion dynamically adjusts operation timing by selecting appropriate timing values from stored data, ensuring reliable timing control adapts to environmental variations without requiring excessive control operations.

Inventive Principle:
Principle #23Feedback

Solution Approach 2:

The patent performs preliminary action by pre-storing multiple sets of operation timing values corresponding to different temperature and voltage scenarios in the control portion. This allows the system to quickly select the appropriate timing parameters when environmental conditions change, avoiding the need for complex real-time calculations while maintaining high reliability.

Inventive Principle:
Principle #10Preliminary action

3Productivity

If transmission speed is increased, then performance is improved, but operation timing becomes more difficult to control across varying environmental conditions

Engineering Contradiction:
Improvetransmission speedVSAvoidtiming control reliability
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The patent manages the trade-off between transmission speed and timing reliability by pre-calculating and storing optimized timing values for different environmental conditions. When operating at higher transmission speeds, the system selects from pre-optimized timing parameters that account for the increased speed requirements combined with the current temperature and voltage conditions, maintaining reliability without sacrificing performance.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enables more precise control of operation timing, enhancing performance by allowing for increased transmission speed and adaptability to environmental variations, ensuring accurate command execution and refresh operations within semiconductor memory devices.

Implementation Method 1

a temperature sensor, a voltage detection portion, and a control portion. The control portion controls operation timing in the semiconductor memory device to meet specific conditions based on the temperature detected by the temperature sensor

Methodology Applied
Scientific EffectTemperature sensing:

Data Source

PatentUS11488652B2Semiconductor memory device to control operating timing based on temperature of the memory device
Publication Date: 2022.11.01 WINBOND ELECTRONICS CORP
  • US11488652B2 patent drawing
  • US11488652B2 patent drawing
  • US11488652B2 patent drawing

AI summary

A semiconductor memory device can appropriately control operation timing, based on changes in the environment (for example, power supply voltage and temperature, etc.) when in use. The semiconductor memory device includes a temperature sensor 18 that detects the temperature of the semiconductor memory device, a voltage detection portion (composed of a ring oscillator 14 and a counter 15) that detects the power supply voltage of the semiconductor memory device, and a control portion 10 that controls the operation timing in the semiconductor memory device to meet specific conditions, according to the temperature detected by the temperature sensor 18 after the power is applied and the voltage detected by the voltage detection portion after the power is applied.