Semiconductor Memory Internal Voltage Stability
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Solution Overview
Problem
Conventional semiconductor memory devices face instability in maintaining internal voltages at stable levels due to fluctuations in external power supply voltages, leading to potential data loss and operational disturbances.
Innovation Solution
An internal voltage generating circuit that detects external power supply voltage variations and adjusts its driving ability by employing multiple drivers or enhancing driver capabilities to maintain internal voltages within a stable range, ensuring consistent operation of semiconductor memory devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional internal voltage generating circuit is used, then the circuit structure is simple, but the internal voltage becomes unstable when external power supply voltage fluctuates
Solution Approach 1:
The patent implements a feedback mechanism where the internal voltage generating circuit detects external power supply voltage variations and adjusts its driving ability accordingly. The detection unit monitors external voltage changes and feeds this information back to the voltage generating circuit, which then modifies its operation to maintain stable internal voltage levels despite external fluctuations.
Solution Approach 2:
The patent introduces dynamic adjustment capability to the internal voltage generating circuit. Instead of operating at fixed driving ability, the circuit can dynamically change its driving strength based on real-time external voltage conditions. This is achieved through controllable current sources that adjust their output current according to detected voltage variations, enabling the circuit to adapt to changing external conditions.
2Reliability
If the driving ability of internal voltage generator is increased, then internal voltage stability improves, but power consumption increases
Solution Approach 1:
The patent employs dynamic control of the voltage generating circuit's driving ability. The circuit adjusts its current consumption based on the detected external voltage conditions - operating at higher driving ability only when external voltage drops require compensation, and reducing current consumption when external voltage is stable. This dynamic adjustment resolves the contradiction by making power consumption variable rather than continuously high.
Solution Approach 2:
The patent changes the operating parameters of the voltage generating circuit based on external conditions. By varying the current through controllable current sources in response to detected voltage variations, the circuit optimizes its power consumption while maintaining internal voltage stability. The parameter changes allow the circuit to use minimal power under normal conditions and increase power usage only when necessary for stability.
Data Source
AI summary
A semiconductor memory device includes a voltage detector configured to detect a level of an external power supply voltage and an internal voltage generator configured to generate an internal voltage in response to an active signal and drive an internal voltage terminal with a driving ability corresponding to an output signal of the voltage detector. A method for operating the semiconductor memory device includes detecting a level of an external power supply voltage, based on a first target level, to output a detection signal; and generating an internal voltage in response to an active signal, and driving an internal voltage terminal with a driving ability corresponding to the detection signal.