Semiconductor Memory Internal Voltage Generator Stability
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Solution Overview
Problem
Semiconductor memory devices face malfunctions due to unstable internal voltages, particularly when the supply voltage is lower than a predetermined level, leading to errors in initial operations and inadequate power management.
Innovation Solution
The semiconductor memory device incorporates a control signal generator for creating reference and compensating signals, an internal voltage generator, and a voltage comparator to maintain stable internal voltages by sensing the supply voltage and compensating the internal voltage accordingly, ensuring reliable operation even during power-up and standby modes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If the semiconductor memory device operates with a supply voltage lower than a predetermined level, then power consumption is reduced, but malfunctions occur due to unstable internal voltages
Solution Approach 1:
The patent implements a feedback mechanism where the internal voltage generator continuously monitors the actual internal voltage level and adjusts its output accordingly. When the supply voltage drops below the predetermined level, the feedback loop detects the resulting internal voltage deviation and compensates by adjusting the generation parameters to maintain stable internal voltages, thus preventing malfunctions while allowing lower supply voltage operation
Solution Approach 2:
The patent changes the operating parameters of the internal voltage generator based on the supply voltage level. When supply voltage is low, the generator modifies its internal parameters (such as switching frequencies, duty cycles, or feedback gain) to compensate for the reduced input voltage and maintain stable internal voltage output, enabling reliable operation across a wider supply voltage range
2Loss of time
If the internal voltage generator starts operating before the supply voltage reaches the predetermined level, then power-up time is reduced, but malfunctions occur due to insufficient voltage levels
Solution Approach 1:
The patent prepares the internal voltage generator for operation in advance by pre-configuring its circuit parameters and feedback mechanisms during manufacturing. This preliminary setup allows the generator to start immediately when power is applied and quickly stabilize the internal voltages without waiting for the supply voltage to reach a predetermined level, reducing power-up time while ensuring stable operation
Solution Approach 2:
The patent implements dynamic parameter adjustment in the internal voltage generator that adapts to the current supply voltage level in real-time. During power-up, the generator dynamically modifies its operating parameters based on the instantaneous supply voltage, allowing it to operate effectively even when the supply voltage is still rising and has not yet reached the predetermined level, thus reducing power-up time while maintaining reliability
3Device complexity
If the internal voltage level is not maintained stably after generation, then device complexity is reduced, but errors occur in initial operations
Solution Approach 1:
The patent incorporates a feedback mechanism that continuously monitors the internal voltage level after generation and automatically adjusts the voltage generator's output to maintain stability. This feedback loop detects any deviations from the target voltage level and compensates in real-time, ensuring stable internal voltages during initial operations without requiring complex external voltage maintenance circuitry
Solution Approach 2:
The patent implements self-service functionality within the internal voltage generator, where the generator autonomously maintains its own output voltage stability through built-in monitoring and adjustment mechanisms. The generator detects its own output voltage levels and automatically corrects deviations without external intervention, maintaining operational reliability while minimizing additional device complexity
Data Source
AI summary
Embodiments of the present invention are directed to provide an internal voltage generator of a semiconductor memory device for generating a predetermined stable level of an internal voltage. The semiconductor memory device includes a control signal generator, an internal voltage generator and an internal voltage compensator. The control signal generator generates a reference signal and a compensating signal which are corresponding to voltage level of the reference signal. The internal voltage generator generates an internal voltage in response to the reference signal. The internal voltage compensator compensates the internal voltage in response to the compensating signal.