Semiconductor Memory Voltage Generator Standby Leakage

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Solution Overview

Problem

Semiconductor memory devices face challenges in reducing current consumption during standby mode due to leakage currents in PMOS and NMOS transistors, which affect operating speed and efficiency.

Innovation Solution

A voltage generator that determines operational modes based on a chip enable signal, switching between internal and external power voltages to apply appropriate bulk voltages to transistors, thereby reducing leakage current in standby mode by using an operation mode determination circuit and a bulk voltage generation circuit.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If bulk voltage is applied to transistors to prevent latch-up and stabilize threshold voltages, then reliability is improved, but current leakage increases in standby mode

Engineering Contradiction:

Improvetransistor stabilityVSAvoidleakage current

Core Design Contradiction:

ReliabilityVSLoss of energy

Solution Approach 1:

The bulk voltage generation circuit dynamically switches between internal power voltage and external power voltage based on operational mode. In active mode, internal power voltage is used to maintain transistor stability. In standby mode, external power voltage is applied to reduce leakage current, thus adapting the bulk voltage to different operational requirements.

Inventive Principle:

Principle #15Dynamics

Solution Approach 2:

The invention changes the parameter of bulk voltage by selecting different power sources (internal or external) depending on the operational mode. This parameter change allows the system to optimize between reliability and energy loss by applying appropriate bulk voltage levels for each mode.

Inventive Principle:

Principle #35Parameter changes

2Speed

If internal power voltage is used as bulk voltage in active mode, then operating speed is maintained, but current consumption increases in standby mode

Engineering Contradiction:

Improvetransistor operating speedVSAvoidstandby current consumption

Core Design Contradiction:

SpeedVSUse of energy by moving object

Solution Approach 1:

The system dynamically selects the power source for bulk voltage based on operational mode. During active mode, internal power voltage is applied to maintain high operating speed. During standby mode, external power voltage is applied to minimize current consumption, thus dynamically optimizing performance vs. energy usage.

Inventive Principle:

Principle #15Dynamics

Solution Approach 2:

The power supply system is segmented into internal power voltage source and external power voltage source, each serving different operational modes. This segmentation allows the system to use the appropriate power source for each mode, optimizing both speed and energy efficiency.

Inventive Principle:

Principle #1Segmentation

3Loss of energy

If external power voltage is used as bulk voltage in standby mode, then leakage current is reduced, but operating speed may be affected

Engineering Contradiction:

Improveleakage current reductionVSAvoidtransistor operating speed

Core Design Contradiction:

Loss of energyVSSpeed

Solution Approach 1:

The bulk voltage generation circuit dynamically switches between external and internal power voltage sources based on operational mode. External power voltage is applied during standby mode to reduce leakage current, while internal power voltage is applied during active mode to maintain operating speed, thus dynamically optimizing both energy efficiency and performance.

Inventive Principle:

Principle #15Dynamics

Data Source

PatentUS9607709B2Voltage generator, semiconductor memory device having the same, and method of operating semiconductor memory device

Publication Date: 2017.03.28 SK HYNIX INC

AI summary

A voltage generator that includes an operation mode determination circuit suitable for determining an active mode or a standby mode based on a chip enable signal to activate an active mode signal or a standby mode signal according to a result of the determination; and a bulk voltage generation circuit outputting a bulk voltage having an internal power voltage when the active mode signal is activated, and outputting the bulk voltage having an external power voltage when the standby mode signal is activated.