Non-volatile Memory Read Voltage Offset Control
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Solution Overview
Problem
Existing non-volatile memory devices face challenges in efficiently performing read operations, particularly in distinguishing between normal and cache read operations to effectively adjust read voltages and improve operational reliability.
Innovation Solution
A non-volatile memory device that includes a voltage generator capable of adjusting read voltage levels using basic and additional offset levels, depending on whether the read operation is a normal or cache read operation, to enhance read retry operations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the read voltage is adjusted using only a basic offset level for all read operations, then the device complexity is reduced, but the reliability of cache read operations deteriorates
Solution Approach 1:
The voltage generator applies different offset levels (basic offset level for normal read operations, additional offset level for cache read operations) to achieve local optimization of read reliability for different operation types, resolving the contradiction between reliability and complexity
Solution Approach 2:
The voltage generator dynamically selects and adjusts offset levels based on the detected read operation type, enabling adaptive voltage control that improves reliability without requiring a completely separate voltage generation system for each operation mode
2Reliability
If the read voltage is adjusted using additional offset levels for cache read operations, then the reliability of cache read operations is improved, but the device complexity increases
Solution Approach 1:
The voltage generator applies different offset levels (basic offset level for normal read operations, additional offset level for cache read operations) to achieve local optimization of read reliability for different operation types, resolving the contradiction between reliability and complexity
Solution Approach 2:
The voltage generator preliminarily determines the read operation type and selects the appropriate offset level before executing the read operation, ensuring optimal voltage is applied without requiring complex real-time adjustments during the read process
3Productivity
If a unified voltage adjustment method is used for all read operations, then the ease of operation is improved, but the productivity of memory systems deteriorates
Solution Approach 1:
The control circuitry detects the read operation type and provides feedback to the voltage generator, which then automatically selects the appropriate offset level, enabling the system to optimize performance through automated feedback-based voltage adjustment without complicating the user interface
Solution Approach 2:
The voltage generator autonomously determines which offset level to apply based on the read operation type detected by the control circuitry, allowing the system to self-optimize performance without requiring manual intervention or complex user control
Data Source
AI summary
Disclosed are a non-volatile memory device, a memory system including the same and a read method of the memory system, in which the non-volatile memory device includes a first storage in which a basic offset level for a read retry operation is stored, a second storage in which an additional offset level for the read retry operation is stored, and a voltage generator suitable for adjusting, when the read retry operation is performed, a read voltage by using the basic offset level and further by selectively using the additional offset level depending on a read operation.