Nonvolatile Memory Voltage Adjustment for Programming Speed
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Solution Overview
Problem
Current nonvolatile semiconductor memory devices, particularly flash memory, face challenges in achieving increased operation speed while maintaining reliability, as they often require multiple program loops to ensure data retention and accuracy, which can lead to slower programming speeds due to the need for incremental step pulse programming.
Innovation Solution
A method is introduced where the initial program voltage for nonvolatile memory devices is adjusted based on the number of program loops performed between detecting a program-passed memory cell and the completion of a program operation, allowing for optimized programming by using a control logic circuit to incrementally adjust the voltage, thereby reducing the number of loops required for successful programming.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If multiple program loops are used to ensure data retention and accuracy, then reliability is improved, but programming speed deteriorates
Solution Approach 1:
The patent dynamically adjusts the program voltage parameter based on the number of program loops completed. When a memory cell passes the program verify operation in an earlier loop, the control logic increases the program voltage for subsequent loops, allowing faster programming of cells that require it while maintaining reliability through adaptive voltage modulation rather than using a fixed high voltage throughout all loops
Solution Approach 2:
The patent implements dynamic program voltage adjustment where the initial program voltage is not fixed but varies based on real-time detection of program-passed cells. The control logic circuit continuously monitors program operation progress and modifies voltage parameters accordingly, transforming the static programming process into a dynamic one that optimizes both speed and reliability
2Manufacturing precision
If incremental step pulse programming is used to ensure programming accuracy, then manufacturing precision is improved, but operation time increases
Solution Approach 1:
The patent performs preliminary detection of program-passed cells during each program loop and uses this information to prepare voltage adjustment decisions in advance. By detecting which cells have successfully passed the program verify operation and pre-calculating the appropriate voltage increases for subsequent loops, the system avoids unnecessary incremental steps for cells that are already properly programmed, thereby reducing overall programming time while maintaining precision
Data Source
AI summary
A nonvolatile memory device detects a first memory cell to be successfully programmed in a program operation for multiple memory cells connected to a wordline, and then detects a number of program loops required to successfully program the remaining memory cells connected to the wordline. An initial program voltage of subsequent program operations is then adjusted based on the detected number of loops.