Non-Volatile Memory Wear Leveling via Storage Group Swapping
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Solution Overview
Problem
Non-volatile memories face reliability challenges due to limited write endurance, leading to uneven wear distribution and potential failure, especially in phase change memory devices, where traditional wear leveling methods are inefficient and vulnerable to malicious attacks.
Innovation Solution
A memory system with a memory controller that performs wear leveling by swapping storage groups with different write counts between areas that support and do not support physical addressing, allowing for flexible data swap granularity and resistance to malicious attacks.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If traditional wear leveling methods are used in non-volatile memory, then write endurance is extended, but the system remains vulnerable to malicious attacks and has inefficient wear distribution
Solution Approach 1:
The memory system is segmented into multiple storage areas with different addressing capabilities. The patent divides the non-volatile memory into first storage groups in a first area (supporting physical addressing) and second storage groups in a second area (not supporting physical addressing), enabling differentiated wear leveling strategies for each segment to improve both reliability and attack resistance
Solution Approach 2:
The patent introduces a memory controller as an intermediary that manages wear leveling operations. The controller implements intelligent algorithms to swap data between storage groups based on write counts, acting as a mediator that distributes wear evenly while preventing malicious attacks by controlling access patterns
2Reliability
If wear leveling is performed by swapping storage groups, then wear distribution is improved, but system complexity increases
Solution Approach 1:
The patent changes the parameter of storage group organization by creating distinct first and second storage groups with different addressing properties. This parameter change simplifies the wear leveling logic by providing clear criteria for swapping operations based on write counts and area characteristics
Solution Approach 2:
Instead of moving data from low-write to high-write areas traditionally, the patent inverts the approach by utilizing areas that do not support physical addressing for specific wear leveling purposes, reversing conventional wisdom to simplify the control logic
Data Source
AI summary
The present disclosure provides a memory system with a non-volatile memory that includes a plurality of storage areas. Each storage may include a plurality of first storage groups in a first area and a plurality of second storage groups in a second area. The first area may support physical addressing. The second area may not support physical addressing. A memory controller of the memory system may perform a wear leveling process by swapping a first storage group having a first group write count with a second storage group having a second group write count. The first group write count may be a maximum group write count among a plurality of group write counts corresponding to the plurality of first storage groups. The second group write count may be a minimum group write count among a plurality of group write counts corresponding to the plurality of second storage groups.