Non-volatile Memory Progressive Defect Detection via Word Line Floating

The patent applies preliminary action by performing defect detection before data storage operations. The system detects progressive defects in word lines, channels, and common source lines by monitoring leakage current and threshold voltage shifts during initial operations. By identifying and marking defective regions beforehand, the system prevents erroneous data writing or reading in affected areas, thus maintaining reliability without changing the standard flash memory structure.

The patent implements feedback by continuously monitoring operational parameters such as leakage current, threshold voltage shifts, and read/write verification results. When anomalies indicating progressive defects are detected, the system provides feedback to the memory controller to adjust operations, avoid defective regions, or trigger corrective actions. This closed-loop monitoring prevents data loss by identifying defects before they cause unrecoverable errors.

The patent applies partial action by performing comprehensive defect detection only when necessary, such as during initial memory initialization, after specific stress conditions, or when anomaly indicators are triggered. For routine operations, the system uses lighter monitoring methods that check only critical parameters. This approach maintains adequate detection accuracy while minimizing the time overhead and operational complexity.