Memory Chip Write Recovery Timing for Temperature Stability
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Solution Overview
Problem
The existing Dynamic Random Access Memory (DRAM) devices face issues with data loss and reduced stability due to prolonged or shortened writing recovery times at low and high temperatures, respectively, leading to incomplete data writing and decreased operational speed.
Innovation Solution
A method and device that adjust the writing recovery time of a memory chip based on real-time temperature measurements, using a temperature detection circuit and a controlling chip to ensure the writing recovery time aligns with the actual conditions, thereby preventing data loss and maintaining operational efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the writing recovery time is extended to ensure complete data writing at low temperatures, then the writing stability is improved, but the operational speed of the memory device decreases
Solution Approach 1:
The patent applies dynamics by making the writing recovery time adjustable rather than fixed. The memory device dynamically changes the writing recovery time parameter based on detected temperature conditions, allowing optimization between stability and speed for different operating environments. The controlling chip receives temperature information and adjusts the writing recovery time parameter accordingly.
Solution Approach 2:
The patent implements parameter changes by modifying the writing recovery time parameter based on temperature. The system changes this critical timing parameter adaptively - extending it at low temperatures to ensure complete writing, and reducing it at high temperatures to maintain operational speed, thus resolving the contradiction between reliability and speed.
2Productivity
If the writing recovery time is shortened to increase operational speed at high temperatures, then the productivity is improved, but the writing stability deteriorates due to incomplete data writing
Solution Approach 1:
The system dynamically adjusts the writing recovery time based on real-time temperature detection. At high temperatures, the writing recovery time is shortened to maintain operational speed, while the system compensates for potential stability issues through precise temperature-based control and adaptive timing adjustments.
Solution Approach 2:
The patent changes the writing recovery time parameter adaptively based on temperature conditions. At high temperatures, the parameter is reduced to improve productivity, while the controlling chip monitors and adjusts this parameter to prevent incomplete writing, thus balancing productivity and reliability.
3Device complexity
If a fixed writing recovery time is used regardless of temperature, then the device complexity is reduced, but the adaptability to different temperature environments deteriorates
Solution Approach 1:
The patent achieves universality by enabling the memory device to operate effectively across multiple temperature environments through a single adaptive control mechanism. The temperature detection circuit and controlling chip work together to provide universal temperature-based adaptation, allowing the device to function optimally in both low-temperature and high-temperature conditions without requiring separate hardware configurations.
Solution Approach 2:
The system implements feedback by using the temperature detection circuit to continuously monitor temperature conditions and providing this information to the controlling chip, which then adjusts the writing recovery time parameter accordingly. This closed-loop feedback mechanism enables automatic adaptation to different temperature environments while maintaining relatively simple device architecture.
Data Source
AI summary
A reading and writing method for a memory device and a memory device are provided. The memory device includes a memory chip. The reading and writing method of the memory device includes that: during operation of the memory chip, the temperature of the memory chip is measured, and a writing recovery time of the memory chip is adjusted according to the temperature.