Memory Bank Write Wiring Segmentation for Faster Writes
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Solution Overview
Problem
In memory devices, the use of a single pair of write data wirings to drive multiple memory banks leads to significant resistance-capacitance (RC) loading, resulting in signal distortion and reduced writing speed, particularly for banks farther from the global write circuit.
Innovation Solution
The memory device is divided into groups, with each group having separate pairs of write data wirings, reducing RC loading and improving writing speed by optimizing the distribution of capacitance on the wirings.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a single pair of write data wirings is used to drive multiple memory banks, then device complexity is reduced, but RC loading increases causing signal distortion and reduced writing speed
Solution Approach 1:
The patent divides the memory banks into multiple groups, with each group driven by a separate pair of write data wirings. This segmentation reduces the RC loading on each wiring pair by limiting the number of banks driven per wiring, thereby maintaining signal integrity and writing speed without significantly increasing overall device complexity.
2Ease of operation
If a single pair of write data wirings is used to drive multiple memory banks, then ease of operation is improved, but signal distortion occurs due to RC loading
Solution Approach 1:
The patent segments memory banks into multiple groups, each with dedicated write data wirings. This reduces RC loading and prevents signal distortion while maintaining operational simplicity through unified control signals. The segmentation ensures reliable signal transmission to all banks without complicating the write operation control mechanism.
3Speed
If separate pairs of write data wirings are provided for each memory bank group, then writing speed is improved, but device complexity increases
Solution Approach 1:
The patent implements segmentation by dividing memory banks into groups with dedicated write data wirings. This approach optimizes writing speed by reducing RC loading on each wiring pair while controlling device complexity through systematic grouping. The increased wiring structure is justified by the significant performance improvement in writing speed and signal integrity.
Data Source
AI summary
A device includes a first memory bank and a second memory bank. The first memory bank is configured to operate according to a write data signal and a first global write signal associated with a first clock signal. The second memory bank is configured to operate according to the write data signal and a second global write signal associated with a second clock signal. One of the first clock signal and the second clock signal is in oscillation when another one of the first clock signal and the second clock signal is in suspension.


