Memristive NDR Circuit Reconfiguration for Variable Oscillation

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Solution Overview

Problem

Static NDR devices, such as tunnel diodes, are limited in their ability to produce oscillating signals with varying properties like frequency, amplitude, and duty cycle, requiring multiple oscillator circuits with different diode devices.

Innovation Solution

A memristive device with a memristive matrix and Metal-Insulator Transition (MIT) material that changes its resistive state with a programming voltage, allowing for reconfiguration of NDR characteristics to produce oscillating signals with different properties.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If static NDR devices such as tunnel diodes are used, then the device structure is simple, but the device cannot change its properties requiring multiple oscillator circuits for different signals

Engineering Contradiction:
Improveability to produce different oscillating signalsVSAvoidnumber of oscillator circuits required
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The patent transforms the static NDR device into a dynamic one by incorporating a memristive element that can change its resistance state based on applied voltage. This allows the oscillator circuit to dynamically adjust its properties and produce different oscillating signals without requiring multiple separate circuits, thereby resolving the contradiction between adaptability and device complexity

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The patent utilizes the ability of the memristive device to change its resistance parameter in response to applied voltage. By varying the resistance state of the memristive element, the oscillator circuit can generate different oscillating signals with varying frequencies and characteristics, enabling a single circuit to replace multiple fixed circuits

Inventive Principle:
Principle #35Parameter changes

2Adaptability or versatility

If multiple oscillator circuits with different diode devices are used, then different oscillating signals can be produced, but the system complexity and component count increase

Engineering Contradiction:
Improvevariety of oscillating signalsVSAvoidnumber of diode devices
Core Design Contradiction:
Adaptability or versatilityVSQuantity of substance

Solution Approach 1:

The patent creates a universal oscillator circuit that can perform multiple functions by using a memristive device capable of changing its state. This single multi-functional circuit can generate various oscillating signals that would otherwise require multiple separate diode devices, thereby reducing the quantity of components while maintaining signal variety

Inventive Principle:
Principle #6Universality (Multi-functionality)

Solution Approach 2:

The patent combines the functionality of multiple separate oscillator circuits into a single integrated circuit by using a memristive device that can dynamically adjust its properties. This merging of functions into one circuit reduces the overall component count and system complexity while maintaining the ability to produce different oscillating signals

Inventive Principle:
Principle #5Merging (Combining)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enables a single oscillator circuit to produce oscillating signals with varied characteristics by changing the memristive device's resistive state, reducing the need for multiple circuits and enhancing flexibility in electronic applications.

Implementation Method 1

in series with a Metal-Insulator Transition (MIT) material

Methodology Applied
Scientific EffectMetal-Insulator Transition: Phase Change

Data Source

PatentUS8274813B2Memristive negative differential resistance device
Publication Date: 2012.09.25 HEWLETT PACKARD ENTERPRISE DEV LP
  • US8274813B2 patent drawing
  • US8274813B2 patent drawing
  • US8274813B2 patent drawing

AI summary

A memristive Negative Differential Resistance (NDR) device includes a first electrode adjacent to a memristive matrix, the memristive matrix including an intrinsic semiconducting region and a highly doped secondary region, a Metal-Insulator-Transition (MIT) material in series with the memristive matrix, and a second electrode adjacent to the MIT material.