MEMS Power Relay Circuit for Fast Switching and Galvanic Isolation

The patent combines MEMS switches and semiconductor power switches in a series configuration within a single relay circuit. The MEMS switch provides galvanic isolation and switching accuracy, while the semiconductor power switch handles power switching functions. This merging allows the system to achieve high switching accuracy with galvanic isolation without requiring expensive pure MEMS implementations for the entire power path.

The patent merges MEMS switches (which provide galvanic isolation) with semiconductor power switches (which provide high switching speed) in a series configuration. The MEMS switch maintains galvanic isolation while the semiconductor power switch enables fast switching responses. This combination allows the relay to achieve both high productivity through fast switching and high reliability through maintained galvanic isolation.

The patent implements the series connection of MEMS and semiconductor power switches in a vertically stacked three-dimensional arrangement rather than a planar layout. This dimensional change allows both switch types to be integrated in a compact volume, reducing the overall device footprint and making the complex series configuration more manageable and manufacturable through vertical stacking processes.

The patent replaces traditional mechanical assembly and packaging methods with a fully integrated wafer-level stacking process. The MEMS and semiconductor power switch wafers are stacked and bonded together at the wafer level before singularization, eliminating the need for separate mechanical assembly steps and complex multi-stage packaging processes. This substitution of mechanical assembly with integrated wafer-level processing achieves high integration density while managing manufacturing complexity through process integration.