A total cross-tied MEMS switch layout uses spaced conductor planes and redundant paths to raise current capacity, dielectric strength, and fault tolerance.
Integrating a diode onto an SOI MEMS switch substrate removes external links, cutting parasitic inductance, capacitance, cost, and space.
A dovetail anchor aperture cuts parasitic capacitance and guides surface current to improve MEMS switch isolation up to 40 GHz with minimal loss.
Protruding structures reshape stress in a MEMS membrane bridge to limit curling, preserve capacitance, and improve switch yield.
Independent actuation of multiple deformable MEMS switch elements increases open-state isolation and closed-state contact force without costly materials.
Stored resonance energy keeps the resoswitch ready between bits, cutting switching time while preserving high-Q signal sensitivity.
A thin gold, platinum, or palladium barrier layer blocks nickel oxidation during high-temperature MEMS processing and limits beam deflection.