Mesa Photodetector Electrode Curvature for ESD Breakdown Suppression
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Solution Overview
Problem
Light receiving devices face issues with electric field concentration leading to electrostatic-discharge breakdown (ESD breakdown), which affects their performance and reliability.
Innovation Solution
A light receiving device with a semiconductor layer and electrodes arranged in a two-dimensional array, where the contact portion between the electrodes and the semiconductor layer has a closed curved periphery, effectively alleviating electric field concentration and suppressing ESD breakdown.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional electrode structures are used, then device simplicity is maintained, but electric field concentration occurs leading to ESD breakdown
Solution Approach 1:
The contact portion of the electrode is designed with a curved peripheral shape instead of sharp corners or straight edges. This curvature distributes the electric field more uniformly across the electrode-semiconductor interface, preventing field concentration at specific points and thereby suppressing ESD breakdown while maintaining structural simplicity
2Reliability
If electrode area is increased to reduce field concentration, then ESD breakdown is suppressed, but device area increases
Solution Approach 1:
The invention changes the geometric parameters of the contact portion, specifically implementing a curved peripheral shape with controlled radius of curvature. This parameter modification allows the electrode to maintain its original area while achieving uniform electric field distribution, thus suppressing ESD breakdown without increasing device area
Data Source
AI summary
A light receiving device includes a semiconductor layer, and at least one electrode provided on a surface of the semiconductor layer and electrically connected to the semiconductor layer. A plurality of mesas are formed from the semiconductor layer. The plurality of mesas are arranged in a two-dimensional array. The at least one electrode includes a plurality of electrodes, and each of the plurality of mesas is provided with a corresponding one of the plurality of electrodes. A contact portion has a periphery forming a closed curved shape, the contact portion being a portion at which the plurality of electrodes and the semiconductor layer are in contact with each other.