Mesa Bipolar Semiconductor Edge Protection via Aluminum Oxide and Organic Layer
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Solution Overview
Problem
Semiconductor components with MESA-shaped bipolar chips face contamination issues due to inadequate protection of their edge surfaces, which can negatively affect electrical properties and mechanical durability.
Innovation Solution
A combination of an aluminum oxide layer and a crosslinked organic material, such as silicone rubber or polyimide, is applied to the entire edge surface of the semiconductor chip, providing dual-layer protection against contamination and mechanical influences. The aluminum oxide layer ensures strong adhesion and effective coverage, while the crosslinked organic material enhances durability and adhesion further.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If an organic material passivation layer is applied to the edge surface of the semiconductor chip, then the edge is protected against mechanical influences, but the adhesion is insufficient and dirt particles can still contaminate the edge
Solution Approach 1:
The patent applies a composite passivation structure consisting of an inorganic aluminum oxide layer combined with an organic material layer. The aluminum oxide layer provides strong adhesion to the semiconductor substrate and excellent contamination resistance, while the organic material layer contributes mechanical protection. This composite approach resolves the contradiction by combining materials with complementary properties rather than relying on a single material that cannot simultaneously provide both strong adhesion and contamination protection.
Solution Approach 2:
The aluminum oxide layer serves as an intermediary between the semiconductor substrate and the organic material passivation layer. It provides a stable, strongly adhering base layer that prevents direct contact between the organic material and the substrate, ensuring both strong overall adhesion and effective contamination barrier functionality while allowing the organic material to maintain its mechanical protection properties.
2Device complexity
If the edge surface of the semiconductor chip is left unprotected, then the structure remains simple, but the edge is vulnerable to contamination and mechanical damage
Solution Approach 1:
The passivation protection is segmented into functionally distinct layers: an aluminum oxide layer specifically tasked with providing strong adhesion and contamination resistance, and an organic material layer focused on mechanical protection. This segmentation allows each layer to optimize its specific function without compromising the other, achieving comprehensive edge protection while maintaining reasonable structural simplicity through clear functional division.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution effectively protects the semiconductor chip's edge surface from contamination and mechanical damage, ensuring reliable electrical performance and prolonged component lifespan.
Implementation Method 1
The aluminum oxide layer 7 adheres very well to the edge surface 6 of the semiconductor chip 1
Implementation Method 2
A layer 8 consisting of a crosslinked organic material is arranged on the surface of the aluminum oxide layer 7
Data Source
Figure 1~3
Figure 4~5
Figure 6~7
AI summary
The invention relates to a semiconductor device with a MESA-shaped bipolar semiconductor chip (1), wherein a first metallization layer (4) is arranged on a first main surface (2) of the semiconductor chip (1) and a second metallization layer (5) is arranged on a second main surface (3) of the semiconductor chip (1) opposite the first main surface (2) of the semiconductor chip (1), and wherein an aluminum oxide layer (7) is arranged on an edge surface (6) of the semiconductor chip (1) that surrounds the semiconductor chip (1) and connects the first and second main surfaces (2, 3). The invention further relates to methods for manufacturing semiconductor devices (10).