Thyristor TRIZ Cases
- ESD Protection Structure Using Isolation Trench and Epitaxial Layer
An ESD protection structure uses an isolation trench and epitaxial layer to form a compact semiconductor junction.
- Ultra-fast Breakover Diode for Thyristor Overvoltage Protection
Optimized semiconductor layers enable ultra-fast breakover diodes to trigger below 0.3 microseconds, preventing thyristor overheating during voltage spikes.
- IGBT Edge Structures for Uniform Current Flow
Reduced n+ dopant concentration and deep insulating trenches in insulated gate turn-off thyristor edge cells.
- Open Drain DMOS Driver with Integrated ESD Protection
An open drain output driver cell merges a reverse blocking diode within the drift region of a double-diffused metal oxide semiconductor structure.
- Light Emitting Component Voltage Reducing Layer
A light emitting component integrates a voltage reducing layer with a smaller bandgap to lower thyristor drive voltage.
- V-Shape Metal-Bond Blade for Semiconductor Wafer Dicing
A metal-bond blade with a V-shaped point and fine abrasive particles cuts semiconductor wafers.