Mesa Semiconductor Device Groove Insulation
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Solution Overview
Problem
Conventional mesa semiconductor devices are prone to contamination and physical damage due to water ingress between the anode electrode and insulation film, and adding a passivation film complicates the manufacturing process and increases costs.
Innovation Solution
A mesa semiconductor device with a semiconductor substrate having a PN junction, a first insulation film with openings, an electrode exposed through the openings, a mesa groove, and a second insulation film that fills the groove and covers the first insulation film and electrode end portions, eliminating the need for an additional passivation film.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a passivation film is added to cover the anode electrode and prevent water ingress, then the reliability and protection against contamination is improved, but the manufacturing process complexity and cost increase
Solution Approach 1:
The patent merges the protection function into the existing second insulation film that fills the mesa groove. This film simultaneously serves as both the groove filler and the protective covering for the anode electrode, eliminating the need for a separate passivation film and simplifying the manufacturing process while maintaining reliability
Solution Approach 2:
The second insulation film is designed to perform multiple functions: filling the mesa groove, covering the sidewalls, and extending onto the front surface to cover the anode electrode. This multi-functional design eliminates the need for additional dedicated protection layers
2Ease of operation
If the anode electrode is exposed to allow electrical contact, then the electrical functionality is achieved, but water ingress and physical damage occur through gaps between the electrode and insulation film
Solution Approach 1:
The patent extends the second insulation film from the vertical sidewalls onto the horizontal front surface, creating an overhang structure. This dimensional extension blocks water ingress paths while preserving electrode exposure for electrical contact
3Stability of the object's composition
If the mesa groove is formed deeper than the N- type semiconductor layer to create proper mesa structure, then the structural integrity is improved, but the electrode becomes more exposed and vulnerable to damage
Solution Approach 1:
The second insulation film is applied to cover the anode electrode before final device assembly, creating a protective barrier in advance. This preliminary protection prevents physical damage during subsequent handling and assembly processes
Data Source
AI summary
The invention provides a mesa semiconductor device and a method of manufacturing the same which minimize the manufacturing cost and prevents contamination and physical damage of the device. An N− type semiconductor layer is formed on a front surface of a semiconductor substrate, and a P type semiconductor layer is formed thereon. An anode electrode is further formed on the P type semiconductor layer so as to be connected to the P type semiconductor layer, and a mesa groove is formed from the front surface of the P type semiconductor layer deeper than the N− type semiconductor layer so as to surround the anode electrode. Then, a second insulation film is formed from inside the mesa groove onto the end portion of the anode electrode. The second insulation film is made of an organic insulator such as polyimide type resin or the like. The lamination body made of the semiconductor substrate and the layers laminated thereon is then diced along a scribe line.