Mesh Lower Electrode Reservoir Capacitor for Noise Reduction
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Solution Overview
Problem
Conventional MOS-type capacitors in semiconductor devices have low electrostatic capacitance due to their reduced size, making them unsuitable as reservoir capacitors in highly integrated semiconductor devices, where noise reduction is essential.
Innovation Solution
A semiconductor device with a cylindrical or concaved lower electrode in the cell region and a meshed, checkered, matrix-type, or lattice-type lower electrode in the peripheral region is used as a reservoir capacitor, along with a MOS-type capacitor between the semiconductor substrate and the wiring layer, formed using titanium or a titanium nitride structure, to increase the dielectric film contact area and minimize capacitance deterioration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the size of MOS-type capacitor is reduced to increase integration degree, then device integration is improved, but electrostatic capacitance deteriorates
Solution Approach 1:
The invention transitions from a conventional planar capacitor structure to a three-dimensional structure where the lower electrode extends downward into the semiconductor substrate. This vertical extension into the depth dimension increases the effective capacitance area without increasing the planar footprint, thereby maintaining high integration while improving electrostatic capacitance
Solution Approach 2:
The lower electrode is nested within the semiconductor substrate, with part of the electrode structure embedded in the substrate volume. This nesting approach allows the capacitor to utilize the substrate space efficiently, increasing capacitance without occupying additional device area
2Productivity
If MOS-type capacitor is used for highly integrated device, then device integration is improved, but noise reduction capability deteriorates
Solution Approach 1:
By extending the lower electrode vertically into the substrate, the invention creates additional separation between the capacitor structure and surrounding noise-generating elements in the horizontal plane. This three-dimensional configuration provides better noise isolation while maintaining compact integration
Solution Approach 2:
The extended lower electrode structure acts as an intermediary that couples the capacitor to the substrate in a way that provides both electrical connection and noise filtering. The increased contact area with the substrate enables better signal stabilization and noise reduction
Data Source
AI summary
In a semiconductor device and a method for manufacturing the same, a mesh shaped lower electrode of a peripheral region is used as a reservoir capacitor to increase the size of a region contacting a dielectric film, such that Cs deterioration is minimized. An exemplary semiconductor device may include a line-type storage node contact plug formed over a semiconductor substrate, a mesh shaped lower electrode formed over the storage node contact plug, and a dielectric film and an upper electrode formed over the lower electrode.